Multi-band magnetotransport in exfoliated thin films of CuxBi2Se3
Journal of Physics: Condensed Matter IOP Publishing 30:15 (2018) 155302
Abstract:
We report magnetotransport studies in thin (<100 nm) exfoliated films of CuxBi2Se3 and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with Tc ∼ 3.5 K and a possible electronic phase transition around 200K. Following exfoliation, superconductivity is supressed and a strongly temperature dependent multi-band conductivity is observed for T < 30K. This transition between competing conducting channels may be enhanced due to the presence of electronic ordering, and could be affected by the presence of an effective internal stress due to Cu intercalation. By fitting to the weak antilocalisation conductivity correction at low magnetic fields we confirm that the low temperature regime maintains a quantum phase coherence length Lφ > 100 nm indicating the presence of topologically protected surface states.Multi-band magnetotransport in exfoliated thin films of CuxBi2Se3
Journal of physics. Condensed matter : an Institute of Physics journal (2018)
Abstract:
We report magnetotransport studies in thin (<100nm) exfoliated films of CuxBi2Se3 and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with Tc ~3.5K and a possible electronic phase transition around 200K. Following exfoliation, superconductivity is supressed and a strongly temperature dependent multi-band conductivity is observed for T<30K. This transition between competing conducting channels may be enhanced due to the presence of electronic ordering, and could be affected by the presence of an effective internal stress due to Cu intercalation. By fitting to the weak antilocalisation conductivity correction at low magnetic fields we confirm that the low temperature regime maintains a quantum phase coherence length Lφ > 100nm indicating the presence of topologically protected surface states.Creating oxide dot arrays on III-V semiconductors by AFM lithography
Chapter in Microscopy of Semiconducting Materials 2003, (2018) 661-664
Abstract:
We perform local anodic oxidation (LAO) on III-V semiconductor surfaces with the help of an atomic force microscope (AFM). Regular arrays of oxide dots are created by applying a voltage in the range 10-20 V to a conducting tip. We succeed in drawing dots with diameters of 30nm or less and heights of 4-6nm, allowing for lattice periods as small as 75nm. With an anodisation time of 100-250ms per dot, the creation of large patterns is possible provided the drift of the instrument is corrected for.Impact of the Halide Cage on the Electronic Properties of Fully Inorganic Cesium Lead Halide Perovskites
ACS ENERGY LETTERS (2017)
Impact of the halide cage on the electronic properties of fully inorganic cesium lead halide perovskites
ACS Energy Letters American Chemical Society 2:7 (2017) 1621-1627