Robin Nicholas

Abstract:

We report magnetotransport studies in thin (<100 nm) exfoliated films of CuxBi2Se3 and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with Tc ∼ 3.5 K and a possible electronic phase transition around 200K. Following exfoliation, superconductivity is supressed and a strongly temperature dependent multi-band conductivity is observed for T < 30K. This transition between competing conducting channels may be enhanced due to the presence of electronic ordering, and could be affected by the presence of an effective internal stress due to Cu intercalation. By fitting to the weak antilocalisation conductivity correction at low magnetic fields we confirm that the low temperature regime maintains a quantum phase coherence length Lφ > 100 nm indicating the presence of topologically protected surface states.

Abstract:

We report magnetotransport studies in thin (<100nm) exfoliated films of Cu_xBi₂Se₃ and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with T_c∽3.5K and a possible electronic phase transition around 200K. Following exfoliation, superconductivity is supressed and a strongly temperature dependent multi-band conductivity is observed for T<30K. This transition between competing conducting channels may be enhanced due to the presence of electronic ordering, and could be affected by the presence of an effective internal stress due to Cu intercalation. By fitting to the weak antilocalisation conductivity correction at low magnetic fields we confirm that the low temperature regime maintains a quantum phase coherence length L_φ > 100nm indicating the presence of topologically protected surface states.

Abstract:

We perform local anodic oxidation (LAO) on III-V semiconductor surfaces with the help of an atomic force microscope (AFM). Regular arrays of oxide dots are created by applying a voltage in the range 10-20 V to a conducting tip. We succeed in drawing dots with diameters of 30nm or less and heights of 4-6nm, allowing for lattice periods as small as 75nm. With an anodisation time of 100-250ms per dot, the creation of large patterns is possible provided the drift of the instrument is corrected for.