Enhanced excitonic interactions in doped quantum wells in high magnetic fields
SPRINGER PROC PHYS 87 (2001) 989-990
Abstract:
We report a strong enhancement and transformation of the Fermi edge singularity at high magnetic fields in a series of doped GaAs-Al33%Ga67%As quantum wells with width varying from 68 Angstrom to 150 Angstrom with carrier densities similar to4 (.) 10(11)cm(-2). We explain this behavior in terms of a resonance process due to collective excitations of the 2D system created by interband absorption. Such a collective excitation or "Mahan" trion occurs whenever a pair of electrons with a total momentum equal to zero becomes bound by the Coulomb attraction to a valence band hole.Excitonic properties of ZnS quantum wells
PHYSICAL REVIEW B 64:15 (2001) ARTN 155321
Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells
JOURNAL OF PHYSICS-CONDENSED MATTER 13:10 (2001) 2317-2329
Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
PHYSICAL REVIEW B 64:8 (2001) ARTN 081203
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
SOLID STATE COMMUNICATIONS 117:11 (2001) 649-654