Robin Nicholas: Publications

Excitonic properties of ZnS quantum wells

PHYSICAL REVIEW B 64:15 (2001) ARTN 155321

Authors:

B Urbaszek, CM Townsley, X Tang, C Morhain, A Balocchi, KA Prior, RJ Nicholas, BC Cavenett

Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

JOURNAL OF PHYSICS-CONDENSED MATTER 13:10 (2001) 2317-2329

Authors:

B Urbaszek, C Morhain, C Bradford, CB O'Donnell, SA Telfer, X Tang, A Balocchi, KA Prior, BC Cavenett, CM Townsley, RJ Nicholas

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Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

PHYSICAL REVIEW B 64:8 (2001) ARTN 081203

Authors:

PA Shields, RJ Nicholas, FM Peeters, B Beaumont, P Gibart

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InGaAs/GaAs quantum wells and quantum dots on (111)B orientation

SOLID STATE COMMUNICATIONS 117:11 (2001) 649-654

Authors:

SL Tyan, YG Lin, FY Tsai, CP Lee, PA Shields, RJ Nicholas

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Insulating states of a 2-dimensional electron-hole system in high magnetic field

SPRINGER PROC PHYS 87 (2001) 895-896

Authors:

K Takashina, RJ Nicholas, B Kardynal, N Mason, D Maude, JC Portal

Abstract:

We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display reproducible fluctuations. A comparison with measurements made on a Corbino disc reveals that these features occur due to conduction at the mesa edge. We propose a simple model based on edge states.

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Robin Nicholas

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Excitonic properties of ZnS quantum wells

Authors:

Excitons with large binding energies in MgS/ZnSe/MgS and ZnMgS/ZnS/ZnMgS quantum wells

Authors:

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

Authors:

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation

Authors:

Insulating states of a 2-dimensional electron-hole system in high magnetic field

Authors:

Abstract:

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