Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
SPRINGER PROC PHYS 87 (2001) 907-908
Abstract:
We report studies of vertical superlattice transport in short period superlattices at high magnetic fields. This shows new magnetophonon resonances can occur in which LO phonons are resonantly scattered between high density of states regions of the superlattice leading to cycling of the carriers through high conductivity regions of the miniband.Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy
J CRYST GROWTH 221 (2000) 166-171
Abstract:
We discuss the use of fixed wavelength infrared absorption measurements as a means for observing compositional changes in MOVPE process gas mixtures using relatively simple instrumentation consisting of an incandescent lamp, a narrow bandpass filter matched to the CH stretch modes of the alkyl precursors, and an infrared detector. An advantage of this setup is that the low energy of the infrared radiation does not induce photolysis reactions on the analyser cell windows in contrast to ultraviolet-based techniques. We present preliminary data on gas composition measurements obtained in the alkyl lines of an MOVPE reactor and show that useful information can readily be obtained on absolute gas concentrations, gas switching transients, and reactor line memory effects. (C) 2000 Elsevier Science B.V. All rights reserved.Metal-insulator oscillations in a two-dimensional electron-hole system.
Phys Rev Lett 85:11 (2000) 2364-2367
Abstract:
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
IEE P-OPTOELECTRON 147:3 (2000) 209-215
Abstract:
Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapour phase epitaxy and assessed by means of atomic force microscopy, transmission electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490 +/- 10 degrees C and luminesced in the mid-infrared at about 1.7 mu m. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the InSb islands from hillocks without facets and a low level of order, to dumbbell shaped islands with distinct facets and a higher level of order. Self-assembled GaSb islands were grown on GaAs at 550 degrees C and assessed for comparison by means of AFM.The upgrade of the oxford high magnetic field laboratory
IEEE Transactions on Applied Superconductivity 10:1 (2000) 15521555