Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 39:6A (2000) 3286-3289
Magneto-reflectivity of gallium nitride epilayers
PHYS STATUS SOLIDI B 216:1 (1999) 17-20
Abstract:
We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magneto-excitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges with reduced masses of (0.195 +/- 0.01) m(0) and (0.180 +/- 0.003) m(0) respectively. The field dependence of the A-exciton 1s and 2p states gives a reduced mass of (0.180 +/- 0.005) m(0), and (0.193 +/- 0.005) m(0) is found with the B-exciton 1s state. The B exciton shows a clear spin splitting at 57 T, whereas no splitting of the A exciton is observed.A far infrared modulated photoluminescence (FIRM-PL) study of cyclotron resonance in a 2D electron gas in GaAs/AlxGa1-xAs heterojunctions
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14:9 (1999) 768-774
Intersubband transitions in InAs GaSb semimetallic superlattices
PHYSICAL REVIEW B 59:16 (1999) 10785-10791
Optical probing of the minigap in InAs/GaSb superlattices
PHYSICAL REVIEW B 60:3 (1999) 1884-1891