The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy
SEMICOND SCI TECH 11:11 (1996) 1477-1481
Abstract:
Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions are used to measure the effective mass of Composite Fermions (CF). The CF effective mass is found to increase approximately linearly with the effective field B* up to effective fields of 14 T. Data from all fractions around nu = 1/2 are unified by the single parameter B* for samples studied over a wide range of temperature. The energy gap is found to increase as root B* at high fields. Hydrostatic pressure is used to reduce the value of the electron g-factor, and this is shown to have a large effect on the relative strengths of different fractions. By 13.4 kbar, where the Zeeman energy is only 1/4 of its value at 0 bar, fractions with odd numerators are found to be strongly suppressed, and new features with even numerators appear. The energy gaps measured for 5/3 as a function of carrier density and pressure are consistent with a g-factor equal to the bulk value enhanced by a factor of two due to exchange interactions.A magneto-optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants
JOURNAL OF APPLIED PHYSICS 79:9 (1996) 6826-6833
Cyclotron resonance and spin states in GaAs/Ga1-xAlxAs heterojunctions: Experiment and theory
PHYSICAL REVIEW B 54:19 (1996) 13807-13815
Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions
INTERNATIONAL JOURNAL OF MODERN PHYSICS B 10:2 (1996) 169-202
Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes
APPLIED PHYSICS LETTERS 69:23 (1996) 3569-3571