Magneto-optical studies of the type I type II crossover and band offset in ZnTe/Zn1-xMnxTe superlattices in magnetic fields up to 45 T
SOLID STATE ELECTRON 40:1-8 (1996) 69-74
Abstract:
We report measurements of magneto-reflectivity in ZnTe/Zn1-xMnxTe superlattices in magnetic fields up to 45 Tesla. From an analysis of the Zeeman splitting, we investigate the change of band alignment with field and the band offset ratio. A crossing of the 1 s exciton transitions from the ZnTe buffer layer and the 1 s heavy hole sigma(+) exciton of the superlattice is observed, providing unambiguous evidence of a band alignment change from type I to type II. The excitonic energy levels for both type I and type II band structure are calculated using a variational method. This model fits the experimental data very well at high field for both sigma(+) and sigma(-) transitions. A conduction band offset ratio of Delta E(c)/Delta E(g) = 0.72 +/- 0.04 is deduced.Magneto-optical studies of compressively strained GaInP/AlGaInP multiple quantum wells
SOLID STATE ELECTRON 40:1-8 (1996) 597-600
Abstract:
A series of compressively strained G(0.44)In(0.56)P/(Al0.7Ga0.3)(0.52)In-0.48 P multiple quantum well structures have been studied in magnetic fields up to 45 T. Laudau levels from several excitomic transitions have been observed in reflectivity spectra, allowing an accurate determination of the carrier masses and excitonic binding energies. It is shown that while the observed masses are lower than those seen in unstained GaInP/AlGaInP for wide wells, as the width decreases the mass in the strained samples increases sharply.Magnetophonons in short-period superlattices
PHYSICAL REVIEW B 54:20 (1996) 14540-14549
Observation of the zero Hall resistance state in a semimetallic superlattice
SURF SCI 362:1-3 (1996) 481-484
Abstract:
The quantum Hall effect has been measured in an intrinsic semimetallic superlattice with almost equal electron and hole densities. Giant oscillations are seen in the Hall resistivity, and at high fields and pressures a zero-resistance state is observed where the Hall resistivity goes to zero due to compensation of the Hall fields of the two carrier types. This behaviour is interpreted in terms of the limiting properties of rho(xx) and rho(xy)Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11:1 (1996) 34-38