Growth of InAs/GaSb strained layer superlattices .1.
J CRYST GROWTH 145:1-4 (1994) 778-785
Abstract:
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Whilst long period SLSs have been successfully grown by this technique, the growth of short period structures is adversely affected by step-bunching. By growing the SLSs faster and cooler, good periodicity was achieved as measured by Raman spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) in SLSs with bilayer (GaSb + InAs) thicknesses as thin as 50 Angstrom. We have also detected the InSb-like and GaAs-like interface modes from room temperature Raman measurements for the first time in MOVPE grown samples. The most promising samples have been assessed by FIR photoconductivity at 4.2 K and show bandgaps (dependent on the bilayer thickness) between 5 and 20 mu m.OPTICAL AND MAGNETOTRANSPORT PROPERTIES OF SEMIMETALLIC INAS/(IN,GA)SB SUPERLATTICES
PHYSICA B 201 (1994) 271-279
PULSED AND HIGH-TEMPERATURE SUPERCONDUCTING MAGNET TECHNOLOGY IN OXFORD
PHYSICA B 201 (1994) 546-550
CYCLOTRON AND INTERSUBBAND RESONANCE STUDIES IN [001] AND PIEZOELECTRIC [111] INAS/(GA,IN)SB SUPERLATTICES
SOLID STATE ELECTRON 37:4-6 (1994) 1227-1230
DIRECT OBSERVATION OF THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN CROSSED BAND-GAP SUPERLATTICES AT MAGNETIC-FIELDS OF UP TO 150-T
SOLID STATE ELECTRON 37:4-6 (1994) 1027-1030