CYCLOTRON-RESONANCE MEASUREMENTS ON P-TYPE STRAINED-LAYER SI1-XGEX/SI HETEROSTRUCTURES
PHYSICAL REVIEW B 51:19 (1995) 13499-13502
INFLUENCE OF LIGHT ON THE CONFINEMENT POTENTIAL OF GAAS/ALXGA1-XAS HETEROJUNCTIONS
PHYSICAL REVIEW B 52:4 (1995) 2688-2696
Long wavelength photoresponse of short period InAs/GaSb superlattices
INST PHYS CONF SER (1995) 287-291
Abstract:
We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 band k.p calculation is used to estimate the band gap and also to fit the interband Landau level transitions throughout the semiconducting layer thicknesses range.MAGNETOOPTICAL STUDIES OF THE TYPE-I TYPE-II CROSSOVER AND BAND-OFFSET IN ZNTE/ZN1-2MNXTE SUPERLATTICES IN MAGNETIC-FIELDS UP TO 45 T
PHYSICAL REVIEW B 52:7 (1995) 5269-5274
MAGNETOTRANSPORT IN A PSEUDOMORPHIC GAAS/GA0.8IN0.2AS/GA0.75AL0.25AS HETEROSTRUCTURE WITH A SI DELTA-DOPING LAYER
PHYSICAL REVIEW B 52:16 (1995) 12218-12231