STUDIES OF PIEZOELECTRIC EFFECTS IN [111] ORIENTED STRAINED GA1-XINXSB/GASB QUANTUM-WELLS
INSTITUTE OF PHYSICS CONFERENCE SERIES (1992) 443-448
STUDIES OF PIEZOELECTRIC EFFECTS IN [111] ORIENTED STRAINED GA1-XINXSB/GASB QUANTUM-WELLS
120 (1992) 443-448
SUPERLATTICE DISPERSION IN INGAAS/INGAASP MULTI-QUANTUM-WELLS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 7:4 (1992) 493-497
THE PRESSURE-DEPENDENCE OF THE EFFECTIVE MASS IN A GAAS/ALGAAS HETEROJUNCTION
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 7:6 (1992) 787-792
ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
J CRYST GROWTH 107:1-4 (1991) 518-519