PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6:6 (1991) 527-534
PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6:1 (1991) 45-53
STRAIN AND MINIBANDS IN INGAAS-GAAS SUPERLATTICES
SUPERLATTICES AND MICROSTRUCTURES 9:4 (1991) 521-525
VALENCE BAND SPIN SPLITTING IN STRAINED IN0.18GA0.82AS/GAAS QUANTUM-WELLS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 6:5 (1991) 359-364
Bound state cyclotron resonance in modulation doped GaAs-AlxGa1−xAs quantum wells
Surface Science Elsevier 229:1-3 (1990) 488-492