Investigation of inter-valley scattering and hot phonon dynamics in GaAs quantum wells using femtosecond luminescence intensity correlation
Superlattices and Microstructures 6:2 (1989) 199-202
Abstract:
Photoluminescence intensity correlation measurements of GaAs quantum wells using 120 fs laser pulses show relatively slow relaxation times ≤ 10 ps at high energy close to the L valley conduction band minimum. This value is consistent with recent measurements of the L → Γ scattering time. However, theoretical estimates show that nonequilibrium phonon effects can also give rise to slow relaxation on this timescale.INVESTIGATION OF INTER-VALLEY SCATTERING AND HOT PHONON DYNAMICS IN GAAS QUANTUM WELLS USING FEMTOSECOND LUMINESCENCE INTENSITY CORRELATION
SUPERLATTICES AND MICROSTRUCTURES 6:2 (1989) 199-202
MAGNETIC FIELD-DEPENDENT HOT CARRIER RELAXATION IN GAAS QUANTUM WELLS
SOLID-STATE ELECTRONICS 31:3-4 (1988) 387-390
Photoluminescence study of two-dimensional carriers in the presence of in-plane magnetic fields
Surface Science 170:1-2 (1986) 624-628
Abstract:
We have measured the effect of in-plane magnetic fields on the photoluminescence of 2D carriers confined in a modulation-doped GaAsAlGaAs MQW heterostructure. The most dramatic effect is a large increase, and eventual saturation at high fields, of the intensity of radiative recombination at interface acceptors (binding energy ∼ 10 meV). We explain this as a result of field-induced spreading of the confined wave functions toward the barriers. We show this behavior to be qualitatively consistent with an analytically soluble model which combines the in-plane magnetic field with harmonic quantum well confinement to give a 1D composite oscillator. The low field spreading is due to linear displacement of the oscillator centers with B; at higher fields the magnetic field confinement shrinks the wave functions, and they recede from the interfaces. We observe also a diamagnetic shift and a spectral narrowing of the band-to-band recombination. These effects are confirmed quantitatively with the composite oscillator model. © 1986.Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
Surface Science 170:1-2 (1986) 511-519