Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures
Springer Nature (1985) 567-570
PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS
PHYSICA B & C 134:1-3 (1985) 318-322
MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.
IEE Colloquium (Digest) (1984)
Abstract:
In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density one can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
Physical Review Letters 53:19 (1984) 1841-1844
Abstract:
We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society.TIME-RESOLVED PHOTOLUMINESCENCE OF TWO-DIMENSIONAL HOT CARRIERS IN GAAS-ALGAAS HETEROSTRUCTURES
PHYSICAL REVIEW LETTERS 53:19 (1984) 1841-1844