Advanced Functional Materials and Devices (AFMD) Group

Abstract:

We report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directly related to the built-in voltage and that the recombination process is influenced by the distinct charge transport properties of electrons and holes in the pentacene film. By a comparison with p-i-p and n-i-n single-carrier homojunctions, deep trap states located around 0.63 eV below the electron transport level are shown to influence the properties. © 2008 The American Physical Society.

Abstract:

A nondestructive method for assessing the thickness of the photoactive layer in poly(3-hexyl-thiophene):1-(3-methoxy-carbonyl)propyl-1-phenyl- (6,6) C61 (P3HT:PCBM) solar cells is reported. In the approach the absorption spectrum of the solar cell as derived by optical simulations is fitted to the corresponding measured spectrum, varying only the P3HT:PCBM layer thickness. Within the 50-250 nm thickness range, a linear correlation between the position of a certain spectral minimum and the P3HT:PCBM layer thickness is shown, based on simulated absorption spectra. As an initial application, absorption spectra for 240 P3HT:PCBM solar cells prepared at four different spin-coating speeds were recorded, and the average P3HT:PCBM layer thickness estimated for each spin-coating speed. The simulated fraction of light absorbed in the P3HT:PCBM layer of the solar cells is compared with the P3HT:PCBM absorption spectra measured for films spin coated on simpler substrate types. The latter spectra cannot account for the light harvested in the photoactive layer of P3HT:PCBM solar cells because of substantial optical interference in the solar cells. The measured short circuit current densities Jsc for the solar cells vary with the spin-coating speed in a manner confirmed by optical simulations of the maximal short circuit current densities. The measured efficiencies follow the same pattern. On average the measured Jsc is 1-2 mA cm2 below the simulated maximal short circuit current densities. Based on the resemblance of the measured and simulated absorption spectra such difference can be attributed to recombination exclusively. © 2007 American Institute of Physics.

Abstract:

The current-voltage characteristic and the performance of organic bulk-heterojunction solar cells are very sensitive to small variations in the production steps or environmental influences. In our experiments, we found a large variation of the short-circuit current, which does not correspond to the device thickness as one might expect. The fill factor of some devices is below 25% under illumination, while the best devices have a fill factor of about 70%. Electrical impedance spectroscopy can provide information about the conductivity of different regions within the device. In earlier measurements, it was observed that devices with a thick absorber layer might consist of a conductive bulk region and a very poorly conductive depletion region at the metal contact. Using a standard semiconductor device model, it is shown in this paper that this reduces the charge collection efficiency under short-circuit conditions, as there is no electrical field in the bulk region, supporting the charge separation. For devices with the low fill factor, a thin-current limiting layer under forward bias can be identified by electrical impedance spectroscopy and is suggestive of a corroded metal contact. © 2006 Elsevier B.V. All rights reserved.

Abstract:

Organic solar cells have the potential to make cheap photovoltaic devices feasible. In order to achieve this, material and production costs have to be minimised by using device architectures, which are suited to tap the full potential of reel-to-reel production. The inversion of the layer sequence in organic bulk-heterojunction solar cells is motivated by the possibility to omit the commonly used expensive indium tin oxide electrode utilising the so-called wrap through concept. In this concept, the hole contact is formed by a highly conductive formulation of poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate), which is led through via holes in the solar cell to the backside of the substrate in a regular pattern, where it is contacted with a metal layer with low sheet resistance. In this way, a scalable parallel connexion is realised. If higher voltage is desired, one can also connect several such cell segments in series monolithically. We will show that the inversion of the layer sequence is possible without loss of device performance. Using the results of small area inverted devices, we calculate the optimal dimensions of the wrap through solar cell module. First devices with active areas of 2-4 cm2 with parallel and serial wrap through connexion will be shown as proof of concept. © 2006 Elsevier B.V. All rights reserved.