Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage

Journal of Superconductivity 9:2 (1996) 245-252

Authors:

H Kraus, M Gutsche, P Hettl, J Jochum, B Kemmather

Abstract:

Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions. © 1996 Plenum Publishing Corporation.

Growth and characterization of epitaxial vanadium films

Thin Solid Films Elsevier 248:1 (1994) 18-27

Authors:

M Gutsche, H Kraus, J Jochum, B Kemmather, G Gutekunst

Electronic noise of superconducting tunnel junction detectors

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Elsevier 338:2-3 (1994) 458-466

Authors:

J Jochum, H Kraus, M Gutsche, B Kemmather, FV Feilitzsch, RL Mössbauer

Progress on detectors with superconducting tunnel junctions

Proceedings of SPIE - The International Society for Optical Engineering 2006 (1993) 211-220

Authors:

H Kraus, J Jochum, B Kemmather, M Gutsche

Abstract:

Superconducting tunnel junctions as sensitive elements in detectors intended for application to X-ray astronomy provide the possibility to improve the energy resolution by more than one order of magnitude compared to standard semiconductor detectors. We present our results with a detector system consisting of a separate absorber film and superconducting aluminum tunnel junctions attached to its edges. The arrangement of our detector, exploiting `quasiparticle trapping', provides position resolution in addition to very high energy resolution. Progress in resolving power is expected as a result of the implementation of our epitaxially grown vanadium absorber films, exhibiting a long mean free path for electrons. Details of the absorber film fabrication are discussed and several methods of characterizing the quality of our absorber films are presented. In addition to the experimental results with our detectors, we report on our model of electronic noise in tunnel junctions.

Photolithographic fabrication of tunnel junction detectors

Journal of Low Temperature Physics Springer Nature 93:3-4 (1993) 637-639

Authors:

B Kemmather, H Kraus, J Jochum, M Gutsche