AFM observation of surface acoustic waves emitted from single symmetric SAW transducers.
IEEE Trans Ultrason Ferroelectr Freq Control 48:3 (2001) 641-642
Abstract:
We report the first experimental observation of surface acoustic waves (SAWs) launched from a single symmetric SAW transducer, employing scanning acoustic force microscopy (SAFM). SAFM is a simple technique for the imaging of complex interdigital transducer (IDT) radiation patterns with nanometer lateral resolution. We demonstrate submicron lateral resolution and high sensitivity by investigating a single excitation element on a weakly coupling substrate (GaAs), visualizing the launched wave and second-order effects.Study of elementary surface acoustic wave phenomena
Europhysics Letters 54:2 (2001) 154-160
Abstract:
Many attempts have been made in acoustic microscopy to both achieve nanometer lateral resolution and sub-A wave amplitude detection. Employing a scanning acoustic force microscopy technique, acoustic wave properties of arbitrarily polarized modes can be measured with sub-wavelength resolution and high sensitivity. Surface acoustic wave fields of elementary model systems like a single scatterer and a single wave source are analysed in detail. We are able to observe radiation patterns, revealing the influence of the anisotropy of the GaAs substrate and the angular distribution of the piezoelectric coupling coefficient.High-resolution imaging of surface acoustic wave scattering
Applied Physics Letters 78:13 (2001) 1948-1950
Abstract:
We examine the scattering of surface acoustic waves (SAWs) by single dots, periodic and locally damped two-dimensional dot lattices. Employing the scanning acoustic force microscope, SAW fields are imaged with nanometer resolution. We study the influence of a roughly wavelength-sized single dot on SAW diffraction. In order to distinguish between forward- and backscattered components, we insonify the dot with the pump and probe beam under 0° and 90°. We furthermore analyse the SAW diffraction by a regular dot array. The wave field appears to be localized around the dots. Adding surface distortions, the regular SAW localization pattern brakes down in the vicinity of the distortion. © 2001 American Institute of Physics.Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
Journal of Applied Physics 89:2 (2001) 1008-1016
Abstract:
Si nanowires grow rapidly by chemical vapor deposition on Ti-containing islands on Si surfaces when an abundant supply of Si-containing gaseous precursor is available. The density of wires is approximately the same as the density of the nucleating islands on the Si surface, although at least two different types of islands appear to correlate with very different wire growth rates. For the deposition conditions used, a minority of long, defect-free wires form, along with more numerous wires containing defects. Energy-dispersive x-ray spectroscopy shows that the Ti-containing nanoparticles remain at the tip of the growing wires. The estimated diffusion coefficient of Si in TiSi2 is consistent with the catalyzing nanoparticle remaining in the solid phase during nanowire growth. © 2001 American Institute of Physics.Reflection and mode conversion of surface acoustic waves studied by scanning acoustic force microscopy
Applied Physics A Materials Science and Processing 72:4 (2001) 491-493