Quantum Optoelectronics

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Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution

Physica Status Solidi (C) Current Topics in Solid State Physics 9:3-4 (2012) 712-714

Authors:

MJ Holmes, YS Park, X Wang, CCS Chan, BPL Reid, H Kim, J Luo, JH Warner, RA Taylor
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Optical studies of quantum dot-like emission from localisation centres in InGaN/GaN nanorod array LEDs

Physica Status Solidi (C) Current Topics in Solid State Physics 9:3-4 (2012) 635-638

Authors:

CCS Chan, PA Shields, MJ Holmes, Y Zhuang, X Wang, BPL Reid, H Kim, DWE Allsopp, RA Taylor
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Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (vol 23, 405602, 2012)

NANOTECHNOLOGY 23:49 (2012) ARTN 499502

Authors:

Young S Park, Mark J Holmes, Robert A Taylor, Kwang S Kim, Seung-Woong Lee, HaeRi Ju, Hyunsik Im
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GaN nanorods grown on Si (111) substrates and exciton localization

Nanoscale Research Letters 6 (2011) 1-5

Authors:

YS Park, MJ Holmes, Y Shon, IT Yoon, H Im, RA Taylor

Abstract:

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I 1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I 1 and I 2 transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd. © 2011 Park et al.
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Internal field shielding and the quantum confined stark effect in a single In xGa 1-xN quantum disk

AIP Conference Proceedings 1399 (2011) 545-546

Authors:

MJ Holmes, YS Park, JH Warner, J Luo, X Wang, AF Jarjour, RA Taylor

Abstract:

Time-integrated and time-resolved microphotoluminescence studies were carried out on In xGa 1-xN quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ∼3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. The lifetime of the emission was measured to decrease with increasing excitation power, attributed to reduced band bending and resulting increased overlap of the confined electron and hole wave functions. © 2011 American Institute of Physics.
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