Crystal-encapsulation-induced band-structure change in single-walled carbon nanotubes: Photoluminescence and Raman spectra
Physical Review B - Condensed Matter and Materials Physics 74:24 (2006)
Abstract:
We report studies of the modification of the band structure of single-walled carbon nanotubes through encapsulation of the inorganic material manganese ditelluride (Mn Te2). Using photoluminescence excitation mapping we show that this leads to a global reduction of their first and second band gap energies by a similar percentage (up to 3.8%). We interpret this as due to the additional screening which causes a change in the internal dielectric constant and a possible lowering of the carbon-carbon transfer integrals. The shifts increase with increasing tube diameter due to the increased quantity of filled materials. © 2006 The American Physical Society.Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
Nanotechnology 17:23 (2006) 5754-5758
Abstract:
By using two-photon excitation spectroscopy we take advantage of the increased spatial resolution to perform time-integrated and time-resolved photoluminescence measurements on several discrete stacks of GaN quantum discs. The stack structure consisted of coupled asymmetric GaN quantum discs with embedded AlGaN barriers, which were grown at the tip of a GaN nanocolumn. We observed that with increasing optical excitation power the carrier lifetime decreased due to free-carrier screening, with an enhancement of the screening effect in the larger quantum disc due to carrier tunnelling from the smaller quantum disc. © 2006 IOP Publishing Ltd.Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
Applied Physics Letters 89:25 (2006)
Abstract:
Carrier localization in InGaNGaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaNGaN MQWs is due to the formation of quantum dots. © 2006 American Institute of Physics.PL, magneto-PL and PLE of the trimetallic nitride template fullerene Er3N@C0
Physica Status Solidi B Basic Research 243:13 (2006) 3037-3041
Abstract:
ErThe effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes
Carbon 44:13 (2006) 2752-2757