Quantum spin dynamics

Abstract:

In undoped pure single crystals of the mixed valence compound SmB6 anomalous ESR absorption is observed in the frequency range v=40-120 GHz at temperatures of 1.8-4.2 K. The ESR for the case of the coherent ground state consists of two components corresponding to g-factors g1=1.907±0.003 and g2=1.890±0.003. The amplitude of both ESR lines strongly depends on temperature in the temperature range studied: the amplitude of the first line with g=gt increases and the amplitude of the second line decreases with temperature. A model based on consideration of intrinsic defects in the SmB6 crystalline lattice, with a density ∼1015-1016 cm-3, is suggested as an explanation for the anomalous ESR-behavior. In the frequency range v>70 GHz at T=4.2 K, in addition to the main ESR lines, a new magnetic resonance with a hysteretic field dependence is discovered. © 1996 American Institute of Physics.

Abstract:

Millimetre wave magnetotransmission measurements are used to provide the first clear evidence for magnetic defects in CeNiSn. At least two defect configurations are observed, both probably involving Ce3+ ions.

Abstract:

Coherent control of individual molecular spins in nano-devices is a pivotal prerequisite for fulfilling the potential promised by molecular spintronics. By applying electric field pulses during time-resolved electron spin resonance measurements, we measure the sensitivity of the spin in several antiferromagnetic molecular nanomagnets to external electric fields. We find a linear electric field dependence of the spin states in Cr$_7$Mn, an antiferromagnetic ring with a ground-state spin of $S=1$, and in a frustrated Cu$_3$ triangle, both with coefficients of about $2~\mathrm{rad}\, \mathrm{s}^{-1} / \mathrm{V} \mathrm{m}^{-1}$. Conversely, the antiferromagnetic ring Cr$_7$Ni, isomorphic with Cr$_7$Mn but with $S=1/2$, does not exhibit a detectable effect. We propose that the spin-electric field coupling may be used for selectively controlling individual molecules embedded in nanodevices.