Quantum spin dynamics

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A scalable, reproducible platform for molecular electronic technologies

ArXiv 2503.13642 (2025)

Authors:

Seham Helmi, Junjie Liu, Keith Andrews, Robert Schreiber, Jonathan Bath, Harry L Anderson, Andrew J Turberfield, Arzhang Ardavan
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Chemical tuning of quantum spin-electric coupling in molecular nanomagnets

(2024)

Authors:

Mikhail V Vaganov, Nicolas Suaud, Francois Lambert, Benjamin Cahier, Christian Herrero, Regis Guillot, Anne-Laure Barra, Nathalie Guihery, Talal Mallah, Arzhang Ardavan, Junjie Liu
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Demonstrating experimentally the encoding and dynamics of an error-correctable logical qubit on a hyperfine-coupled nuclear spin qudit

(2024)

Authors:

Sumin Lim, Mikhail V Vaganov, Junjie Liu, Arzhang Ardavan
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All-electrical driving and probing of dressed states in a single spin

(2024)

Authors:

Hong T Bui, Christoph Wolf, Yu Wang, Masahiro Haze, Arzhang Ardavan, Andreas J Heinrich, Soo-hyon Phark
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High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

npj Quantum Materials Springer Nature 9:1 (2024) 12

Authors:

yuhao Ye, Akiyoshi Yamada, Yuto Kinoshita, Jinhua Wang, Pan Nie, Liangcai Xu, Huakun Zuo, Masashi Tokunaga, Neil Harrison, Ross D McDonald, Alexey V Suslov, Arzhang Ardavan, Moon-Sun Nam, David LeBoeuf, Cyril Proust, Benoit Fauqué, Yuki Fuseya, Zengwei Zhu, Kamran Behnia

Abstract:

Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108° and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal- semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.
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