The electron beam lithography (EBL) facility at the Department of Physics has a Raith e_LINE dedicated electron beam lithography system which is housed in our Class 100 cleanroom. This instrument directly patterns thin layers of resist by scanning an electron beam over the surface and can routinely achieve sub-20nm linewidth on PMMA resist.
The system has a high-performance laser interferometer stage with 2nm resolution and 100mm x 100mm travel, which enables nanolithography on samples from a few mm in size up to 4 inch mask-plates. The pattern-design software integrates proximity effect correction for more demanding lithographic patterning tasks.
We provide training for researchers to use our equipment and we welcome enquiries from across the University of Oxford and beyond, including from commercial and industrial users.