Prof Arzhang Ardavan: Publications

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Applied Physics Letters AIP Publishing 107:13 (2015) 133105

Authors:

Paweł Puczkarski, Pascal Gehring, Chit S Lau, Junjie Liu, Arzhang Ardavan, Jamie H Warner, G Andrew D Briggs, Jan A Mol

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Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

(2015)

Authors:

Paweł Puczkarski, Pascal Gehring, Chit S Lau, Junjie Liu, Arzhang Ardavan, Jamie H Warner, G Andrew D Briggs, Jan A Mol

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The magnetic ground state of two isostructual polymeric quantum magnets, [Cu(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$ and [Co(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$, investigated with neutron powder diffraction

(2015)

Authors:

J Brambleby, PA Goddard, RD Johnson, J Liu, D Kaminski, A Ardavan, AJ Steele, T Lancaster, P Manuel, PJ Baker, J Singleton, SG Schwalbe, PM Spurgeon, HE Tran, PK Peterson, JF Corbey, JL Manson

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A Spin-Frustrated Trinuclear Copper Complex Based on Triaminoguanidine with an Energetically Well-Separated Degenerate Ground State

Inorganic Chemistry American Chemical Society (ACS) 54:7 (2015) 3432-3438

Authors:

Eike T Spielberg, Aksana Gilb, Daniel Plaul, Daniel Geibig, David Hornig, Dirk Schuch, Axel Buchholz, Arzhang Ardavan, Winfried Plass

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Surface acoustic wave devices on bulk ZnO crystals at low temperature

Applied Physics Letters AIP Publishing 106:6 (2015) 063509-063509

Authors:

EB Magnusson, BH Williams, R Manenti, M-S Nam, A Nersisyan, MJ Peterer, Arzhang Ardavan, Peter Leek

Abstract:

Surface acoustic wave (SAW) devices based on thin films of ZnO are a well established technology. However, SAW devices on bulk ZnO crystals are not practical at room temperature due to the significant damping caused by finite electrical conductivity of the crystal. Here, by operating at low temperatures, we demonstrate effective SAW devices on the (0001) surface of bulk ZnO crystals, including a delay line operating at SAW wavelengths of λ = 4 and 6 μm and a one-port resonator at a wavelength of λ = 1.6 μm. We find that the SAW velocity is temperature dependent, reaching v ≈ 2.68 km/s at 10 mK. Our resonator reaches a maximum quality factor of Qi ≈ 1.5 × 105, demonstrating that bulk ZnO is highly viable for low temperature SAW applications. The performance of the devices is strongly correlated with the bulk conductivity, which quenches SAW transmission above 200 K.

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Prof Arzhang Ardavan

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Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Authors:

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Authors:

The magnetic ground state of two isostructual polymeric quantum magnets, [Cu(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$ and [Co(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$, investigated with neutron powder diffraction

Authors:

A Spin-Frustrated Trinuclear Copper Complex Based on Triaminoguanidine with an Energetically Well-Separated Degenerate Ground State

Authors:

Surface acoustic wave devices on bulk ZnO crystals at low temperature

Authors:

Abstract:

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Prof Arzhang Ardavan

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Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Authors:

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

Authors:

The magnetic ground state of two isostructual polymeric quantum magnets, [Cu(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$ and [Co(HF$_{2}$)(pyrazine)$_{2}$]SbF$_{6}$, investigated with neutron powder diffraction

Authors:

A Spin-Frustrated Trinuclear Copper Complex Based on Triaminoguanidine with an Energetically Well-Separated Degenerate Ground State

Authors:

Surface acoustic wave devices on bulk ZnO crystals at low temperature

Authors:

Abstract: