Andrea Cavalleri

Abstract:

Velocity distributions of evaporated particles from laser irradiated GaAs and Silicon give a temperatures in excess of 3000 K at the ablation threshold. The results suggest that explosive boiling causes material removal.

Abstract:

We have investigated femtosecond laser-induced ablation of gallium arsenide and silicon using time-of-flight mass spectroscopy. Below the ablation threshold we observe free flight desorption of atoms from the laser heated surface. The absence of collisions between particles leaving the solid allows to obtain the maximum surface temperature during laser irradiation of Gallium Arsenide. We estimated maximum surface temperatures of the order of 3500 K at the ablation threshold, where we observed a step-like increase in the number of detected particles. In the case of Silicon the existence of molecules of up to 6 atoms does not allow to measure the surface temperature. With increasing fluence free flight desorption transforms into a collisional expansion process. The behaviour of Gallium particles can be quantitatively described through Knudsen-layer theory, indicating that Gallium particles expand as a non-ideal gas close to the ablation threshold (gamma=Cv/Cp<5/3). Above fluences of approximately 2.5 Fth gamma approaches 5/3 indicating an ideal gas behaviour for the expanding material. Dilution into the two phase regime of a superheated liquid characterises ablation close to threshold.

Abstract:

Ultrafast time resolved microscopy has been used to study the dynamics of femtosecond laser induced ablation from the surfaces of various semiconductors and metals. Upon ablation initially metallic matter transforms into a transparent state with a high index of refraction.