Dr Dharmalingam Prabhakaran

Abstract:

Layer-by-layer epitaxial growth of the pyrochlore magnet Tb2Ti2O7 on the isostructural substrate Y2Ti2O7 results in high-quality single crystal films of up to 60 nm thickness. Substrate-induced strain is shown to act as a strong and controlled perturbation to the exotic magnetism of Tb2Ti2O7, opening up the general prospect of strain-engineering the diverse magnetic and electrical properties of pyrochlore oxides.

Abstract:

We report growth of large single crystals of the triangular-lattice antiferromagnetic compound Ba3CoSb2O9 by the floating-zone technique in an image furnace. Evaporation of Sb due to its high volatility was controlled by high pressure and addition of excess Sb in the starting materials to compensate for the losses. The crystal quality was analysed using different X-ray techniques, and the magnetic transition temperature was confirmed by magnetization and heat capacity measurements.

Abstract:

We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B=0 T retains a strong memory of the polarization magnitude and direction, such that upon reentering the ferroelectric phase a net polarization of comparable magnitude to the initial polarization is recovered in the absence of external bias. This memory effect is very robust: in pulsed-magnetic-field measurements, several pulses into the ferroelectric phase with reverse bias are required to switch the polarization direction, with significant switching only seen after the system is driven out of the ferroelectric phase and ground state either magnetically (by application of B>13 T) or thermally. The memory effect is also largely insensitive to the magnetoelastic domain composition, since no change in the memory effect is observed for a sample driven into a single-domain state by application of stress in the [110] direction. On the basis of Monte Carlo simulations of the ground-state spin configurations, we propose that the memory effect is due to the existence of helical domain walls within the nonpolar collinear antiferromagnetic ground state, which would retain the helicity of the polar phase for certain magnetothermal histories.