Paul Goddard

Abstract:

TmAgGe is an antiferromagnet based on the ZrNiAl structure. At low temperatures the spins are confined to distorted kagome-like planes, wherein the magnetisation is strongly anisotropic. A previous study has shown that a series of stepped magnetic transitions are apparent in low, in-plane magnetic fields and can be explained using a three-fold Ising-like model. Here we present high-magnetic-field magnetisation experiments showing that further stepped transitions are observed when the field is directed out of the kagome planes. Angledependent measurements in fields of up to 55 T show that there are at least two distinct and separate energy scales present in this system; the weak exchange interactions and the strong crystalline electric field interactions. Simulations of the magnetisation using a three-dimensional, free-energy minimisation technique allow us to suggest the nature and hierarchy of the forces acting on the Tm3+ moments.

Abstract:

Magnetotransport measurements have been performed on single crystals Of kappa-(BEDT-TTF)(2)Cu(NCS)(2) in fields of up to 33 T at temperatures between 500 mK and 4.2K. Using a diamond anvil cell mounted on a goniometer, measurements of the angle and temperature dependence of the interlayer resistance, R-zz, under hydrostatic pressures between 1.1 kbar and 17.3 kbar were performed. For the first time we have been able to measure angle-dependent magnetoresistance oscillations under pressure due to both the 1D and 2D Fermi surfaces in addition to Shubnikov de Haas oscillations. The results show that the shape of the elliptical quasi-2D Fermi-pocket is more elongated under a hydrostatic pressure of 9.8 kbar compared with ambient pressure. When the magnetic field B is close to parallel to the highly conductive plane, bc, a peak in R-zz is observed with an angular width determined by the ratio of the maximum inter- and intra-layer Fermi velocities. The width of this peak is found to increase with pressure suggesting that the Fermi surface becomes more three-dimensional upon application of pressure.

Abstract:

AuZn undergoes a shape-memory transition at 67 K. The de Haas-van Alphen effect persists to 100 K enabling the observation of a change in the quantum oscillation spectrum indicative of a catastrophic Fermi surface reconstruction at the transition. The coexistence of both Fermi surfaces at low temperatures suggests an intrinsic phase separation in the bulk of the material. In addition, Dingle analysis reveals a sharp change in the scattering mechanism at a threshold cyclotron radius, attributable to the underlying microstructure driving the shape-memory effect.

Abstract:

A finite transfer integral t(a) orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a charge-density wave (CDW). In contrast to semiconductors such as Ge and Si with band gaps approximately 1 eV, the CDW system possesses an indirect gap with a greatly reduced energy scale, enabling moderate laboratory magnetic fields to have a major effect. The consequent variation of the thermodynamic gap with magnetic field due to Zeeman splitting and Landau quantization enables the electronic band structure parameters (transfer integrals, Fermi velocity) to be determined accurately. These parameters reveal the orbital quantization limit to be reached at approximately 20 T in (Per)2M(mnt)(2) salts, making them highly unlikely candidates for a recently proposed cascade of field-induced CDW states.

Abstract:

Martensites are materials that undergo diffusionless, solid-state transitions. The martensitic transition yields properties that depend on the history of the material and may allow it to recover its previous shape after plastic deformation. This is known as the shape-memory effect (SME). We have succeeded in identifying the primary electronic mechanism responsible for the martensitic transition in the shape-memory alloy AuZn by using Fermi-surface measurements (de Haas-van Alphen oscillations) and band-structure calculations. This strongly suggests that electronic band structure is an important consideration in the design of future SME alloys.