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CMP
Credit: Jack Hobhouse

Professor John Gregg

Fellow & Tutor in Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Spintronics
John.Gregg@physics.ox.ac.uk
  • About
  • Research
  • Current projects
  • Publications

High current gain silicon-based spin transistor

Journal of Physics D: Applied Physics 36:2 (2003) 81-87

Authors:

JF Gregg, Dennis, C. L.,, C. Sirisathitkul, G. J. Ensell
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Spin injection efficiency in spin electronic devices

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 265:3 (2003) 274-289

Authors:

JF Gregg, RP Borges, E Jouguelet, CL Dennis, I Petej, SM Thompson, K Ounadjela
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The defining length scales of mesomagnetism: A review

Journal of Physics Condensed Matter 14:49 (2002) R1175-R1262

Authors:

CL Dennis, RP Borges, LD Buda, U Ebels, JF Gregg, M Hehn, E Jouguelet, K Ounadjela, I Petej, IL Prejbeanu, MJ Thornton

Abstract:

This review is intended as an introduction to mesomagnetism, with an emphasis on what the defining length scales and their origins are. It includes a brief introduction to the mathematics of domains and domain walls before examining the domain patterns and their stability in 1D and 2D confined magnetic structures. This is followed by an investigation of the effects of size and temperature on confined magnetic structures. Then, the relationship between mesomagnetism and the developing field of spin electronics is discussed. In particular, the various types of magnetoresistance, with an emphasis on the theory and applications of giant magnetoresistance and tunneling magnetoresistance, are studied. Single electronics are briefly examined before concluding with an outlook on future developments in mesomagnetism.
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Magnetoresistance through a single nickel atom

Physical Review B - Condensed Matter and Materials Physics 66:22 (2002) 2204011-2204014

Authors:

M Viret, S Berger, M Gabureac, F Ott, D Olligs, I Petej, JF Gregg, C Fermon, G Francinet, G Le Goff

Abstract:

The magnetoresistance (MR) of a nickel atomic contact has been measured using the break junction technique. When the contact is only between two atoms, the change of resistance with applied field reaches 40%. It is composed of a continuous bell-shaped curve on which discrete jumps are superimposed. The MR changes sign when the applied field is rotated, which we explain by a spin-orbit coupling change of orbital overlap between the Ni atoms forming the junction. Reproducible jumps in the MR curve are attributed to a field induced change of spin configuration within the few atoms composing the contact.

Magnetoresistance through a single nickel atom

Physical Review B: Condensed Matter and Materials Physics 66:22 (2002) art. no.-220401

Authors:

JF Gregg, I. Petej, M. Viret,, M. Gabureac
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