The defining length scales of mesomagnetism: A review
Journal of Physics Condensed Matter 14:49 (2002)
Abstract:
This review is intended as an introduction to mesomagnetism, with an emphasis on what the defining length scales and their origins are. It includes a brief introduction to the mathematics of domains and domain walls before examining the domain patterns and their stability in 1D and 2D confined magnetic structures. This is followed by an investigation of the effects of size and temperature on confined magnetic structures. Then, the relationship between mesomagnetism and the developing field of spin electronics is discussed. In particular, the various types of magnetoresistance, with an emphasis on the theory and applications of giant magnetoresistance and tunneling magnetoresistance, are studied. Single electronics are briefly examined before concluding with an outlook on future developments in mesomagnetism.Magnetoresistance through a single nickel atom
Physical Review B - Condensed Matter and Materials Physics 66:22 (2002) 2204011-2204014
Abstract:
The magnetoresistance (MR) of a nickel atomic contact has been measured using the break junction technique. When the contact is only between two atoms, the change of resistance with applied field reaches 40%. It is composed of a continuous bell-shaped curve on which discrete jumps are superimposed. The MR changes sign when the applied field is rotated, which we explain by a spin-orbit coupling change of orbital overlap between the Ni atoms forming the junction. Reproducible jumps in the MR curve are attributed to a field induced change of spin configuration within the few atoms composing the contact.Magnetoresistance through a single nickel atom
Physical Review B: Condensed Matter and Materials Physics 66:22 (2002) art. no.-220401
Spin polarized electronic reflections at metal-oxide interfaces: A technique for characterizing tunneling barriers in magnetic random access memory devices
J APPL PHYS 91:10 (2002) 7466-7468
Abstract:
One of the most critical steps in the realization of high quality tunneling devices is the fabrication of ultrathin oxide layers. This article describes a powerful technique for controlling the oxidation of ultrathin metallic layers. The technique consists of depositing the metallic layer to be oxidized on top of the soft magnetic layer of a bottom spin valve. The oxidation kinetics are then monitored by measuring the current in plane sheet resistance and magnetoresistance. The technique relies on the extreme sensitivity of the magnetoresistance on the degree of specular reflection at the soft magnetic layer/oxide interface. (C) 2002 American Institute of Physics.Fabrication and characterisation of Ni nanocontacts
J MAGN MAGN MATER 242 (2002) 492-494