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CMP
Credit: Jack Hobhouse

Professor John Gregg

Fellow & Tutor in Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Spintronics
John.Gregg@physics.ox.ac.uk
  • About
  • Research
  • Current projects
  • Publications

Spin polarization of injected electrons

SCIENCE 296:5571 (2002)

Authors:

WF Egelhoff, MD Stiles, DP Pappas, DT Pierce, JM Byers, MB Johnson, BT Jonker, SF Alvarado, JF Gregg, JAC Bland, RA Buhrman
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Versatile radiofrequency sensor

SENSOR ACTUAT A-PHYS 91:1-2 (2001) 39-41

Authors:

RP Borges, M Bari, JMD Coey, JF Gregg, M Thornton, W Allen

Abstract:

A miniature, monolithic radiofrequency sensor operating with MESFET circuitry in the GHz range is able to detect a wide variety of magnetic, metallic and dielectric materials via the losses induced in the sensitive volume around a coil. Application of the sensor to detect plastic and metal gearwheels and falling liquid drops is illustrated; the signal-to-noise ratio falls off as the inverse distance from the coil to the liquid drop. (C) 2001 Elsevier Science B.V. All rights reserved.
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Spin transistor

(2001)

Abstract:

A spin transistor (10) comprises a spin injector (50) formed of a ferromagnetic material and constituting the emitter (20) of a three-terminal device, a spin filter (70) also formed of a ferromagnetic material and constituting a collector (40), and a semiconductor base (30) region. A tunnelling …

Effect of silicon crystal structure on spin transmission through spin electronic devices

J APPL PHYS 87:9 (2000) 5161-5163

Authors:

DR Loraine, DI Pugh, H Jenniches, R Kirschman, SM Thompson, W Allen, C Sirisathikul, JF Gregg

Abstract:

Spin injection into and spin transport through silicon spacer layers in iron/silicon/cobalt structures has been investigated. Ultrahigh vacuum evaporated silicon spacers of varying crystal quality from amorphous to epitaxial of thicknesses from 10 to 200 Angstrom were shown to improve their electrical conduction with increasing crystallinity, but no spin dependent transport was observed through the structure. Silicon and iron interdiffusion was also observed at the interfacial region. Device quality silicon was studied using 460 and 540 mu m doped silicon wafers of resistivity 0.1 and 1 Omega cm, respectively, polished on both sides, onto which were deposited iron and cobalt layers. Sharp metal-semiconductor interfaces were achieved in this way, but no spin dependent transport, putting an upper limit on the spin diffusion length in device quality silicon wafers. (C) 2000 American Institute of Physics. [S0021-8979(00)92808-1].
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Evidence for a high T-c magnetic amorphous polymorph obtained by swift heavy ion irradiation

NUCL INSTRUM METH B 146:1-4 (1998) 260-264

Authors:

M Ghidini, JP Nozieres, F Bolzoni, G Suran, JF Gregg, B Gervais

Abstract:

The intermetallic compound CeCo3 has been irradiated at GANIL by 1 GeV Pb-208 ion beams. The irradiated samples are found to be strongly amorphised. A track diameter of 8 nm is found. The magnetic properties of the irradiation induced CeCo3 amorphous phase have been studied in detail and found substantially different with respect to those of amorphous CeCo3 obtained by conventional methods. In particular, an increase of about 200 K in the Curie temperature is observed, suggesting that a different type of chemical short range order might have been stabilized by irradiation. (C) 1998 Elsevier Science B.V. All rights reserved.
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