Nanostructures for Spin Electronics
Chapter in Advanced Magnetic Nanostructures, Springer Nature (2006) 403-460
Position and electromagnetic field sensor
(2006)
Abstract:
A susceptibility sensor for detecting relative movement between an inhomogeneously-shaped object (80) to be sensed, and the sensor, comprising: a Robinson marginal oscillator (20) having a plurality of electrical properties; a tank circuit (30) connected to the Robinson marginal oscillator and …Tunnel barrier fabrication on Si and its impact on a spin transistor
J MAGN MAGN MATER 290 (2005) 1383-1386
Abstract:
The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity. © 2004 Elsevier B.V. All rights reserved.Structural and magnetic properties of thin manganite films grown on silicon substrates
Progress in Solid State Chemistry Elsevier 33:2-4 (2005) 293-298
Silicon spin diffusion transistor: materials, physics and device characteristics
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS 152:4 (2005) 340-354