Skip to main content
Home
Department Of Physics text logo
  • Research
    • Our research
    • Our research groups
    • Our research in action
    • Research funding support
    • Summer internships for undergraduates
  • Study
    • Undergraduates
    • Postgraduates
  • Engage
    • For alumni
    • For business
    • For schools
    • For the public
  • Support
Menu
Magnetic skyrmions

Professor Thorsten Hesjedal FInstP

Professor of Condensed Matter Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Thin film quantum materials
  • Oxford Quantum Institute
  • Topological Magnetism Group
Thorsten.Hesjedal@physics.ox.ac.uk
  • About
  • Publications

Magnetization reversal in MnAs films: Magnetic force microscopy, SQUID magnetometry, and micromagnetic simulations

Physical Review B Condensed Matter and Materials Physics 73:10 (2006)

Authors:

R Engel-Herbert, T Hesjedal, J Mohanty, DM Schaadt, KH Ploog

Abstract:

The magnetization reversal of MnAs nanowires was studied by magnetic force microscopy (MFM) imaging in conjunction with superconducting quantum interference device magnetometry and micromagnetic simulations. MnAs films on GaAs(001) exhibit a submicron-sized regular array of ferromagnetic and nonmagnetic stripes, where the width of the stripes can be tuned by the temperature. The investigated thin samples show squarelike hysteresis loops, and the corresponding field-dependent MFM measurements confirm a collective flipping of the domains at the coercive field. Thicker samples, as well as thinner samples at higher temperatures, generally exhibit a rounded magnetization curve with a very low remanent magnetization. Based on three-dimensional micromagnetic simulations, the micromagnetic structure as well as the magnetic hysteresis of MnAs films on GaAs(001) is explained in a consistent way. © 2006 The American Physical Society.
More details from the publisher
More details

Micromagnetic properties of MnAs(0001)/GaAs(111) epitaxial films

Applied Physics Letters 88:5 (2006) 1-3

Authors:

R Engel-Herbert, T Hesjedal, DM Schaadt, L Däweritz, KH Ploog

Abstract:

The micromagnetic properties of MnAs thin films grown on the (111)B-oriented GaAs surface have been investigated. Compared to films grown on (001) surfaces, these films exhibit completely different domain patterns, as the c axis of the hexagonal unit cell is oriented normal to the surface. In the course of the first order phase transition, ferromagnetic α -MnAs forms a network of quasihexagonal areas separated by Β -MnAs. We present an analysis of the micromagnetic properties based on imaging and simulations. We observe closure domains that either appear as a vortex-like state or a stripe structure. © 2006 American Institute of Physics.
More details from the publisher
More details

Studies on acoustically-induced migration in thin layers at GHz frequencies

Sensoren und Messysteme 2006 (2006)

Authors:

F Kubat, W Ruile, C Eberl, T Hesjedal, M Reindl

Competing magnetic interactions in MnAs studied via thin film domain pattern analysis

Physical Review B Condensed Matter and Materials Physics 72:21 (2005)

Authors:

A Ney, T Hesjedal, KH Ploog

Abstract:

Manganese arsenide is one of the few ferromagnetic metals that can be grown on semiconductor substrates as a thin film with high structural perfection. The coupled magnetic and structural phase transition around 40°C leads to a variety of different phenomena such as the self-organized stripe formation on GaAs(001) substrates or the anisotropic lattice shrinkage. By investigating the domain pattern in the phase coexistence region we provide experimental evidence that the magnetic order is due to competing ferromagnetic double-exchange and antiferromagnetic direct exchange interactions. This scenario corroborates recent theoretical calculations and may explain the frequently observed angle of 38° in the domain pattern of epitaxial MnAs films. © 2005 The American Physical Society.
More details from the publisher
More details

Qualitative and quantitative analysis of acoustomigration effects in SAW-devices

Microelectronic Engineering 82:3-4 SPEC. ISS. (2005) 655-659

Authors:

F Kubat, W Ruile, C Eberl, T Hesjedal, LM Reindl

Abstract:

Low-loss surface acoustic wave (SAW) filters are widely used in modern mobile phones, especially for front-end applications. Therefore high power durability of the SAW-structure is required. In order to develop an appropriate metallization the mechanism of acoustomigration has to be investigated in more detail. For this purpose, we designed a two-port test resonator which enables us to investigate acoustomigration in thin films. With a standard measuring procedure to quantify the power durability of metallization it is possible to investigate acoustomigration effects in thin layers systematically. For a better understanding of acoustomigration, we analysed the defect structure by different microscopy techniques as a function of the driving power, testing time and temperature. By in situ tests it was possible for the first time to investigate the growing of extrusions and cracks in real time on a submicron scale. We found a correlation between the loading and the measured number of extrusions as well as the frequency shift of the SAW device. © 2005 Elsevier B.V. All rights reserved.
More details from the publisher
More details

Pagination

  • First page First
  • Previous page Prev
  • …
  • Page 53
  • Page 54
  • Page 55
  • Page 56
  • Current page 57
  • Page 58
  • Page 59
  • Page 60
  • Page 61
  • …
  • Next page Next
  • Last page Last

Footer Menu

  • Contact us
  • Giving to the Dept of Physics
  • Work with us
  • Media

User account menu

  • Log in

Follow us

FIND US

Clarendon Laboratory,

Parks Road,

Oxford,

OX1 3PU

CONTACT US

Tel: +44(0)1865272200

University of Oxfrod logo Department Of Physics text logo
IOP Juno Champion logo Athena Swan Silver Award logo

© University of Oxford - Department of Physics

Cookies | Privacy policy | Accessibility statement

Built by: Versantus

  • Home
  • Research
  • Study
  • Engage
  • Our people
  • News & Comment
  • Events
  • Our facilities & services
  • About us
  • Giving to Physics
  • Current students
  • Staff intranet