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Magnetic skyrmions

Professor Thorsten Hesjedal FInstP

Professor of Condensed Matter Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Thin film quantum materials
  • Oxford Quantum Institute
Thorsten.Hesjedal@physics.ox.ac.uk
Telephone: 01865 (2)72235
  • About
  • Publications

Epitaxial MnAs films studied by ferromagnetic and spin wave resonance

Local-Moment Ferromagnets 678 (2005) 97-109

Authors:

T Tolinski, K Lenz, J Lindner, K Baberschke, A Ney, T Hesjedal, C Pampuch, L Däweritz, R Koch, KH Ploog
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Magnetic coupling and exchange stiffness in striped MnAs films

Europhysics Letters 68:5 (2004) 726-732

Authors:

T Toliński, J Lindner, K Lenz, K Baberschke, A Ney, T Hesjedal, C Pampuch, L Däweritz, R Koch, KH Ploog

Abstract:

We provide the first direct evidence of interactions in a self-organized pattern of coexisting ferromagnetic and paramagnetic MnAs stripe domains as a function of the coupling strength between the stripes (inter) and within one stripe (intra). The value of the intra exchange constant A = 17.7 × 1010 erg/cm is determined unambiguously from spin wave resonance. Additionally, in-plane ferromagnetic resonance measurements reveal the presence of a strong coupling between the neighboring stripes, which can dominate the weak intra-stripe interaction.
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Calculation and experimental verification of the acoustic stress at GHZ frequencies in SAW resonators.

IEEE Trans Ultrason Ferroelectr Freq Control 51:11 (2004) 1437-1448

Authors:

F Kubat, W Ruile, T Hesjedal, J Stotz, U Rösler, LM Reindl

Abstract:

High power applications of Surface Acoustic Wave (SAW) devices may lead to acoustomigration in their thin metal electrodes, which deteriorates the performance or may even destroy the SAW device. It is confirmed in this paper that the mechanism of acoustomigration is caused by the SAW-induced stress in the metal. The quantitative calculation of this stress will be shown in detail, starting from the widely used P-Matrix model as a standard analysis tool. The combination with the partial wave method (PWM) yields the stress distribution inside the metal. This approach provides the flexibility to determine the stresses for any given point in a SAW device, for any input power, frequency, wavetype, device geometry, or metal layer. In order to confirm the absolute values of the stress components, we calculated and measured displacements as a function of input power and frequency.
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Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Applied Physics Letters 85:11 (2004) 1970-1972

Authors:

T Ive, O Brandt, H Kostial, T Hesjedal, M Ramsteiner, KH Ploog

Abstract:

The Si-doped n-type AIN/GaN distributed bragg reflectors grown on 6H-SiC(0001) were discussed. It was observed that the structures were crack-free and have a stopband centered around 450 nm with a full width at half maximum between 40 and 50 nm. It was also observed that the maximum measured reflectance was ≥99%. It was found that the vertical conductance measurements at room temperature on the samples shown on ohmic I-V behavior in the entire measurement range.
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Semiautomatic wet chemical etching of an array of MnAs nanodots and their magnetic properties

Physica E: Low-Dimensional Systems and Nanostructures 24:1-2 SPEC. ISS. (2004) 115-118

Authors:

Y Takagaki, E Wiebicke, J Mohanty, T Hesjedal, L Däweritz, KH Ploog
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