Injection locking of violet laser diodes with a 3.2 GHz offset frequency for driving Raman transitions in 43Ca+
Optics Letters 38:6 (2013) 830-832
Abstract:
Two cw single-mode violet (397 nm) diode lasers are locked to a single external-cavity master diode laser by optical injection locking. A double-pass 1.6 GHz acousto-optic modulator is used to provide a 3.2 GHz offset frequency between the two slave lasers. We achieve up to 20 mW usable output in each slave beam, with as little as 25 μW of injection power at room temperature. An optical heterodyne measurement of the beat note between the two slave beams gives a linewidth of ≤10 Hz at 3.2 GHz. We also estimate the free-running linewidth of the master laser to be approximately 3 MHz by optical heterodyning with a similar device. © 2013 Optical Society of America.Injection-locking of violet laser diodes with a 3.2GHz offset frequency for driving Raman transitions in 43Ca+
(2012)
A microfabricated ion trap with integrated microwave circuitry
ArXiv 1210.3272 (2012)
Abstract:
We describe the design, fabrication and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multiqubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.A microfabricated ion trap with integrated microwave circuitry
(2012)