Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
Nanotechnology 23:40 (2012) 405602
Abstract:
Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodically strained GaN/InGaN multiquantum disks embedded in the middle of GaN nanorods. The GaN NPs, which have ~100 nm diameters and heights, are observed by scanning electron microscopy and their crystalline structure is confirmed by high-resolution transmission electron microscopy. Experimental analysis directly reveals the strain distribution along the growth direction of the NPs. Cathodoluminescence measurements on a single NP show that its emission energy redshifts compared with that of bulk GaN, corroborating the results showing the formation of tensile strain in the NP. Observations of the uniform distribution and localization of these NPs show the possibility of further tuning their size and density by controlling periodically strained nanorod surfaces.Design and fabrication of optical filters with very large stopband (≈500 nm) and small passband (1 nm) in silicon-on-insulator
Photonics and Nanostructures - Fundamentals and Applications 10:4 (2012) 447-451
Abstract:
In this paper, we report on the design, fabrication and characterization of a broadband photonic crystal filter. Modeling with a genetic algorithm (GA) was used to investigate the effect of changing the number of periods and thickness ratios of a photonic crystal filter structure with two alternating materials. Theoretical optimized parameters were obtained as a function of wavelength for a photonic crystal filter with a very broad filter bandwidth as well as a very narrow transmission window. We used the determined optimum parameters at a wavelength of 1550 nm to fabricate the structure using e-beam lithography and inductively coupled plasma (ICP) etching. Experimental results show that the structure indeed has a very narrow transmission window and a low loss of just 4 dB. Hence, this structure can be regarded as a high precision filter for optical communication and photonic integrated chip technologies. © 2012 Elsevier B.V. All rights reserved.Amplified all-optical polarization phase modulator assisted by a local surface plasmon in Au-hybrid CdSe quantum dots
Optics Express 20:18 (2012) 19735-19743
Abstract:
We propose an amplified all-optical polarization phase modulator assisted by a local surface plasmon in Au-hybrid CdSe quantum dots. When the local surface plasmon of a spherical Au quantum dot is in resonance with the exciton energy level of a CdSe quantum dot, a significant enhancement of the linear and nonlinear refractive index is found in both the real and imaginary terms via the interaction with the dipole field of the local surface plasmon. Given a gating pulse intensity, an elliptical polarization induced by the phase retardation is described in terms of elliptical and rotational angles. In the case that a larger excitation than the bleaching intensity is applied, the signal light can be amplified due to the presence of gain in the CdSe quantum dot. This enables a longer propagation of the signal light relative to the metal loss, resulting in more feasible polarization modulation. © 2012 Optical Society of America.MODE MAPPING OF COUPLED CAVITIES IN PHOTONIC CRYSTAL WAVEGUIDES
Institute of Electrical and Electronics Engineers (IEEE) 1 (2012) 5-6
Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
Physica Status Solidi (C) Current Topics in Solid State Physics 9:3-4 (2012) 712-714