Professor Robert Taylor

Abstract:

We investigated the carrier transition properties of the GaN/InGaN/GaN single quantum well bounded by AlGaN barriers. In order to confirm the carrier transition coming from the single quantum well, the single quantum well layer was etched by reactive ion etching method. The structural property of the samples was characterized by high resolution X-ray diffraction measurements. In micro-photoluminescence measurements, it is clearly shown that the donor bound exciton transition of the single quantum well sample was redshifted compared to the etched one due to strain. Moreover, a lot of peaks were observed below the GaN band gap energy due to carrier localization in the InGaN/GaN single quantum well, including carrier localization center and quantum confined states. The excitation power dependence and time resolved photoluminescence spectra were investigated to characterize the optical transition of the single quantum well© 2011 Elsevier B.V. All rights reserved.

Abstract:

Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. Here a strongly coupled system consisting of a single quantum dot and a cavity formed by the local width modulation of a photonic crystal waveguide is demonstrated. The resonance originating from the cavity is clearly identified from microphotoluminescence mapping of the scattered signal along the waveguide. The exciton-photon strong coupling regime is obtained by temperature control. © 2011 American Institute of Physics.

Abstract:

Microphotoluminescence studies were carried out on a single GaN nanocolumn containing a single InGaN quantum disk (QDisk) that had been removed from its growth substrate and dispersed onto a patterned grid. An analysis of the dynamics of the carriers in the nanocolumn is presented. Suppression of the GaN luminescence from the area of the column in the vicinity of the InGaN QDisk in addition to a delayed emission from the QDisk relative to the GaN is observed. Time resolved spatial maps of the luminescence intensity from the column are also presented, illustrating the evolution of the carrier density in the system. © 2011 American Institute of Physics.

Abstract:

Ultrafast non-equilibrium carrier dynamics and many body effects have been investigated in GaN beyond the Mott density. The transient (∼1 ps) induced absorption was observed near the band edge due to band gap renormalisation; collision broadening and temporal evolution of the mean carrier energy were also obtained experimentally. The development of the longitudinal optical (LO)-phonon induced non-thermal electron distribution observed in the pump-probe at early times (≤1 ps) was in excellent agreement with a Monte-Carlo simulation, where the mean carrier energy loss rate of screened carrier-phonon interactions was found to be further reduced due to the hot phonon effect. Schematic diagram of non-equilibrium carrier dynamics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.