Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
PHYS STATUS SOLIDI B 216:1 (1999) 51-55
Abstract:
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near E-LO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near E-LO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation
PHYS STATUS SOLIDI B 216:1 (1999) 465-470
Abstract:
Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending similar to 100 meV below the low-density emission peak. We show that the onset of the stimulated emission coincides with the bleaching of the excitons (the Mott transition).Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
Physica Status Solidi (B) Basic Research 216:1 (1999) 51-55
Abstract:
Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near ELO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near ELO due to the strong electron-LO phonon interaction. Hot phonon effects are pronounced at high carrier densities.Dynamics of resonantly excited excitons in GaN
Physical Review B American Physical Society (APS) 58:24 (1998) R15973-R15976
Optical gain in GaN epilayers
Applied Physics Letters 73:2 (1998) 199-201