Quantum beats of free and bound excitons in GaN
Applied Physics Letters 79:8 (2001) 1097-1099
Abstract:
We present spectrally resolved and time-integrated four-wave mixing measurements at coherent dynamics of bound excitons in a high-quality GaN epilayer. Coherent excitation, with co-circular polarized light, of the neutral donor-bound excitons (D 0X) and A excitons (XA) results in quantum beats, corresponding to the energy splitting between D 0X and XA. The temperature-dependent dephasing rate is used to deduce the strength of the D 0X-acoustic-phonon interaction via the homogeneous linewidth. © 2001 American Institute of Physics.Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
APPLIED PHYSICS LETTERS 79:21 (2001) 3434-3436
Quantum beats of free and bound excitons in GaN
APPLIED PHYSICS LETTERS 79:8 (2001) 1097-1099
Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Physica B: Condensed Matter 272:1-4 (1999) 402-405
Abstract:
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced, and strongly influence the dynamics.Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
PHYSICA B 272:1-4 (1999) 402-405