Coherent exciton-biexciton dynamics in GaN
Physical Review B - Condensed Matter and Materials Physics 65:19 (2002) 1931021-1931024
Abstract:
Spectrally resolved and time-integrated four-wave mixing are used to measure the polarization dependence of biexcitonic signals and quantum beats between two-A-exciton (XAXAZ*) and A-biexciton (XAXA) states in a high-quality GaN epilayer. Mixed beats with two periods are observed: the first beating period corresponds to the energy splitting between XAXA*and XAXA; the second period corresponds to beating between A excitons (XA) and donor bound excitons (DOX). We also measure the polarization-dependent B-biexciton (XBXB) signal. The effective masses for the A and B holes are deduced from the binding energy.Coherent Exciton-Biexciton Dynamics in GaN
Physical Review B: Condensed Matter and Materials Physics 65 (2002) 193102 4pp
Hot phonons and non-thermal carrier states in GaN
Physica B: Condensed Matter 314:1-4 (2002) 30-34
Abstract:
Non-thermal carrier states at early times are studied using femtosecond pump-probe spectroscopy in GaN. After the residual chirp on the continuum probe is removed, the normalized difference spectra (NDS) for different probe energies are synchronized, recovering the full time resolution of our laser pulse (120 fs). Our Monte-Carlo simulation agree well with the unchirped NDS spectrum, which shows the development of the carrier distribution at early times, where phonon satellites are seen, together with a strong non-thermal electron distribution in the region of the LO-phonon energy arising from the remarkably strong electron-LO phonon interaction. Employing a new technique which involves the integration of the normalized NDS multiplied by the corresponding energy, a measure of the mean energy of the carriers in non-thermal states is obtained. By comparing the time-dependent energy loss with the theoretical energy loss rate, we estimate the effective temperature of the phonon modes as well as the population of phonons. Our Monte-Carlo model agrees well with this data, and confirms the dominance of hot phonon effects at early times. © 2002 Elsevier Science B.V. All rights reserved.Saturation of gain in In0.02Ga0.98N/In0.16Ga0.84N MQW plasmas
Physica B Condensed Matter 314:1-4 (2002) 47-51
Abstract:
A new way of analysing the data in a variable stripe length method gain experiment is presented. The stripe length dependence of the gain is measured in InHot phonons and non-thermal carrier states in GaN
PHYSICA B 314:1-4 (2002) 30-34