Professor Robert Taylor: Publications

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

(2004) 568-572

Authors:

JW Robinson, JH Rice, A Jarjour, JD Smith, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, Y Arakawa

Abstract:

We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Time-resolved gain saturation dynamics in InGaN multi-quantum well structures

PHYS STATUS SOLIDI C (2004) 2508-2511

Authors:

K Kyhm, JD Smith, RA Taylor, JF Ryan, Y Arakawa

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Time-resolved dynamics in single InGaN quantum dots

Applied Physics Letters 83:13 (2003) 2674-2676

Authors:

JW Robinson, JH Rice, A Jarjour, JD Smith, RA Taylor, RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, Y Arakawa

Abstract:

A study was performed on the time-resolved dynamics in single InGaN quantum dots. The recombination was shown to be characterized by a single exponential decay. The results showed that the lifetimes of single dots in the temperature range 4 to 60 K decrease with increasing temperature.

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Time-resolved Dynamics in Single InGaN Quantum Dots

Applied Physics Letters 83 (2003) 2674-2676

Authors:

RA Taylor, J.W. Robinson, James H. Rice, A. Jarjour

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InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Applied Physics Letters 83:4 (2003) 755-757

Authors:

RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, JD Smith, RA Taylor

Abstract:

InGaN quantum dots grown by metalorganic vapor phase epitaxy were investigated. The InGaN epilayer was annealed at the growth temperature in molecular nitrogen. Microphotoluminescence studies of the quantum dots revealed sharp peaks with typical linewidths of ∼700 μeV. Time-resolved photoluminescence studies were also used for analysis.

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Professor Robert Taylor

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Sub department

Lasing in perovskite nanocrystals

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

Authors:

Abstract:

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures

Authors:

Time-resolved dynamics in single InGaN quantum dots

Authors:

Abstract:

Time-resolved Dynamics in Single InGaN Quantum Dots

Authors:

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Authors:

Abstract:

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Professor Robert Taylor

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Lasing in perovskite nanocrystals

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

Authors:

Abstract:

Time-resolved gain saturation dynamics in InGaN multi-quantum well structures

Authors:

Time-resolved dynamics in single InGaN quantum dots

Authors:

Abstract:

Time-resolved Dynamics in Single InGaN Quantum Dots

Authors:

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Authors:

Abstract: