Siyu Yan

Abstract:

Effective charge-carrier transport is a key requirement of next-generation thin-film materials developed for solar cells. Perovskite-inspired materials (PIMs), including metal chalcohalides, show great promise as lead-free solar absorbers. However, intrinsic charge-carrier localization processes have frequently been reported to severely limit their transport properties. Recent research has thus focused on developing a rational understanding of this localization process and identifying strategies to eliminate it. Mixed-metal chalcohalides (A₂BCh₂X₃) may offer promising solutions, combining enhanced chemical stability with promising optoelectronic properties. Here, we demonstrate how charge-carrier localization can be overcome through judicious chemical substitution in this family of materials. Upon changing the M(II) cation on the A-site, the lattice symmetry shifts from the lower-symmetry monoclinic P2₁/c phase in Pb₂SbS₂I₃ to the higher-symmetry orthorhombic Cmcm phase in Sn₂SbS₂I₃. Crucially, a rapid localization of charge carriers within the first few picoseconds of their generation is observed only for Pb₂SbS₂I₃, whereas Sn₂SbS₂I₃ maintains a longer-lived nanosecond photoconductivity. We attribute this observation to the higher electronic dimensionality of the Cmcm Sn₂SbS₂I₃ structure, whose more symmetric lattice suppresses the charge-carrier localization dominating in the lower-dimensional P2₁/c Pb-analogue. These findings establish a direct link between structural and optoelectronic properties in metal chalcohalides, demonstrating how facile chemical tuning can be harnessed to overcome charge-carrier localization in PIM absorbers for solar energy harvesting.

Abstract:

Two-dimensional perovskites have emerged as promising materials for optoelectronic applications owing to their excellent environmental stability and tunable quantum confinement. Such 2D perovskites can incorporate a particularly versatile range of organic cations of different size, chemical nature, and optoelectronic character. However, understanding and controlling thin-film transport for this vast family of materials remains a key challenge to their successful application in devices. Here, we systematically investigate odd-even effects in thin films of Ruddlesden-Popper-type (RP) lead-iodide 2D perovskites based on nonconjugated alkylammonium spacer cations with chain lengths ranging from three to eight carbon atoms. A pronounced odd-even dependence on the carbon number is observed in both optical and transport properties, including absorption coefficients, photoluminescence energies and lifetimes, and excitation diffusion dynamics. Notably, the coefficients for charge-carrier diffusion out of the film plane─extracted via a dynamic photon reabsorption approach─display an opposite odd-even trend to the in-plane charge-carrier mobility obtained from optical pump-terahertz probe measurements, causing a pronounced odd-even modulation of the thin-film mobility anisotropy. Grazing-incidence wide-angle X-ray scattering measurements reveal that this behavior is related to cation-controlled nanostructural orientation: even-numbered alkyl spacer cations induce lead-iodide planes lying highly oriented within the film plane, while odd-numbered ones cause more disordered stacking. Furthermore, the observed 1/d²-dependence on interplane distance d in ordered films demonstrates that Förster resonance energy transfer underpins diffusion of excitations between lead-iodide layers. Our findings establish a direct structure-transport correlation in 2D perovskite films and provide valuable guidelines for the design of optoelectronic devices.

Abstract:

Mixed-halide perovskites exhibit ideal band gaps for use in perovskite-based multijunction photovoltaics, but stable performance is compromised by light-induced halide segregation. Photoluminescence (PL) tracking is universally used to monitor such photoinstability; however, here we reveal that such data do not accurately quantify halide segregation. We utilize a combination of simultaneously recorded PL and X-ray diffraction (XRD) measurements to explore CH3NH3Pb­(I1–x Br x )3 films across 18 different halide ratios. While PL data suggests that segregation rates increase exponentially with bromide fraction x, XRD patterns reveal that they are actually unchanged. We demonstrate that PL cannot accurately reflect the rate and extent of halide segregation because it is governed by charge funneling to iodide-rich minority domains, which is strongly influenced by additional factors, including luminescence efficiency, band energetics, and charge extraction. To assess the efficacy of treatments to suppress such photoinstabilities, it is therefore essential to probe changes across the full material volume, e.g. by monitoring XRD or absorption spectra.

Abstract:

While metal halide perovskites have yielded remarkable power conversion efficiencies in photovoltaic applications, uncertainty concerning their long-term stability remains a significant barrier to widespread deployment. Previous studies have demonstrated that trace impurities present in perovskite precursor materials can influence the crystallisation dynamics of perovskite thin-films and hence, affect crystal structure, film morphology and optoelectronic properties. However, the nature of the impurities in formamidinium iodide (FAI) and their effect(s) on film quality and device performance remain underexplored. In this work, we carry out a detailed analysis of the impurities present in commonly used commercial FAI sources, and probe their impact on the composition, structure, and optoelectronic quality of the resulting perovskite thin-films and devices. We find that while some FAI impurities can improve the optoelectronic properties of solution-processed perovskite thin-films, in vapour-processed films, their presence alters the sublimation behaviour of FAI, favouring irreversible degradation pathways which lead to the formation of sym-triazine. While sym-triazine does not directly incorporate into the perovskite films, the impurity-driven variation in sublimation behaviour results in films which can deviate from the target stoichiometry, even under otherwise optimised conditions; and thus, do not fully convert into the desired photoactive phase, eventually causing poor material stability. Our results highlight the importance of understanding and controlling impurity concentrations in perovskite precursor materials as a route to enhancing both performance and process reproducibility in perovskite solar cells.

Abstract:

Thermal evaporation is an industrially compatible technique for fabricating metal halide perovskite thin films, without the requirement for hazardous solvents. It offers precise control over film thickness and is a good candidate for large-scale production of commercial optoelectronic metal halide perovskite devices, such as solar cells. The use of additives to passivate electronic defects in solution-processed metal halide perovskite has led to dramatic increases in device performance. However, there are a few reports of vapor-deposited films with coevaporated passivating agents. Triphenylphosphine oxide (TPPO) has been used as an effective surface passivating agent in solution-processed metal halide perovskite films. It is a promising candidate passivating agent for coevaporation, where it is beginning to be used with encouraging results. However, here we report that triphenylphosphine oxide is incompatible with thermal deposition in the same deposition chamber. Such TPPO remnants are found to result in severe suppression of the perovskite phase, long-range crystalline ordering, and optical absorption of lead halide perovskite films subsequently deposited in the same chamber. TPPO contamination persists even through repeated baking cycles, with the reduction of the contaminant to acceptable levels requiring vacuum chamber dismantling and manual cleaning. We conclude that TPPO should not be coevaporated in order to prevent the contamination of future batches.