Prof Henry Snaith FRS

Abstract:

Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI3-xClx perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9′-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr-1 m-2 at a current density of 363 mA cm-2, with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m-2 at a current density of 123 mA cm-2, giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications. © 2014 Macmillan Publishers Limited. All rights reserved.

Abstract:

Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI3-xClx perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9′-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr-1 m-2 at a current density of 363 mA cm-2, with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m-2 at a current density of 123 mA cm-2, giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications. © 2014 Macmillan Publishers Limited. All rights reserved.

Abstract:

Cation-exchange has been used to synthesize PbS/CdS core/shell colloidal quantum dots from PbS starting cores. These were then incorporated as the active material in solar cell test devices using a solution-based, air-ambient, layer-by-layer spin coating process. We show that core/shell colloidal quantum dots can replace their unshelled counterparts with a similar band gap as the active layer in a solar cell device, leading to an improvement in open circuit voltage from 0.42 to 0.66 V. This improvement is attributed to a reduction in recombination as a result of the passivating shell. However, this increase comes at the expense of short circuit current by creating a barrier for transport. To overcome this, we first optimize the shell thickness by varying the conditions for cation-exchange to form the thinnest shell layer possible that provides sufficient surface passivation. Next, ligand exchange with a combination of halide and bifunctional organic molecules is used in conjunction with the core/shell strategy. Power conversion efficiencies of 5.6 ± 0.4% have been achieved with a simple heterojunction device architecture.

Abstract:

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA. Reversible photo-induced performance deterioration is observed in mesoporous TiO2-containing devices in an inert environment. This phenomenon is correlated with the activation of deep trap sites due to astoichiometry of the metal oxide. Interestingly, in air, these defects can be passivated by oxygen adsorption. These results show that the doping of TiO2with aluminium has a striking impact upon the density of sub-gap states and enhances the conductivity by orders of magnitude. Dye-sensitized and perovskite solar cells employing Al-doped TiO2have increased device efficiencies and significantly enhanced operational device stability in inert atmospheres. This performance and stability enhancement is attributed to the substitutional incorporation of Al in the anatase lattice, "permanently" passivating electronic trap sites in the bulk and at the surface of the TiO2.