Temperature dependence of resistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions
Applied Physics Letters 95:5 (2009)
Abstract:
The temperature dependence of resistance in parallel (P) and antiparallel (AP) configurations (RP,AP) has been investigated in epitaxial Fe/MgO/Fe junctions with varying MgO barrier thicknesses tMgO. RAP exhibits a substantial decrease with increasing temperature for samples with tMgO ranging from 3.0 to 1.5 nm. In contrast, RP is approximately temperature independent when tMgO =3.0 nm and increases with temperature when tMgO =2.1 and 1.5 nm. Possible origins of this temperature dependence of resistance, which include taking into account a spin independent term and consideration of spin-flip scattering, are discussed. We attribute the temperature dependence of RP,AP to the misalignment of magnetic moments in the electrodes due to thermal excitations and its effect on the spin dependent tunneling. © 2009 American Institute of Physics.Magnetic switching modes for exchange spring systems ErFe2 / YFe2 / DyFe2 / YFe2 with competing anisotropies
Journal of Magnetism and Magnetic Materials 321:16 (2009) 2499-2507
Abstract:
The magnetization reversal processes of [10 nm ErFeRoom temperature magneto optic exchange springs in DyFe2 / YFe2 superlattices
Journal of Magnetism and Magnetic Materials 321:6 (2009) 586-589
Abstract:
Exchange springs in hard-soft DyFeTemperature dependence of giant tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions
Physical Review B - Condensed Matter and Materials Physics 78:18 (2008)
Abstract:
The temperature dependence of giant tunnel magnetoresistance (TMR) in epitaxial Fe/MgO/Fe magnetic tunnel junctions has been investigated. The resistance in the parallel configuration between the bottom (free) Fe layer and the top Fe layer, exchange biased by an IrMn antiferromagnetic layer, is nearly independent of the temperature. In contrast, in the antiparallel configuration the resistance increases with decreasing temperature, resulting in an increase in the TMR ratio from 170% at room temperature to 318% at 10 K. The dynamic conductance (G′ =dI/dV) in the parallel configuration shows flat bias voltage dependence in the range ±0.4 V, but in the antiparallel configuration it shows typical parabolic behavior as a function of bias voltage. A model, based on the temperature dependence of magnetic disorder in the two electrodes and its effect on the spin-dependent tunneling, is proposed to describe the temperature dependence of the TMR ratio and the resistance, in good agreement with our experimental data. © 2008 The American Physical Society.Magnetic anisotropy induced by patterning in (1 1 0) MBE-grown ternary Laves phase TbDyFe2 films
Journal of Alloys and Compounds 455:1-2 (2008) 31-34