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CMP
Credit: Jack Hobhouse

Roger Ward

Retiree

Sub department

  • Condensed Matter Physics
Roger.Ward@physics.ox.ac.uk
Telephone: 01865 (2)72271,01865 (2)72355
Clarendon Laboratory, room 164
  • About
  • Publications

The influence of interfacial roughness on the coherence of structure and magnetic coupling across barriers in Fe/MgO multilayers.

Journal of physics. Condensed matter : an Institute of Physics journal 22:22 (2010) 226004

Authors:

R Fan, SJ Lee, JP Goff, RCC Ward, SG Wang, A Kohn, C Wang, AR Wildes, SP Collins

Abstract:

Single-crystal Fe/MgO multilayers are model systems in which to study magnetic tunnel junctions. We find that the interfacial roughness leads to the loss of coherence of the crystal structure. For thick MgO layers ferromagnetic (FM) ordering is found using polarized neutron reflectivity (PNR). For thin MgO layers magnetization measurements reveal the presence of antiferromagnetic (AF) interactions, but no long-range AF order is found using PNR. After cycling in a hysteresis loop, FM correlations are found at the coercive point, and this will limit the maximum tunnelling magnetoresistance.
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Chemical and magnetic structure of uranium/gadolinium multilayers studied by transmission electron microscopy, neutron scattering, and x-ray reflectivity

Physical Review B American Physical Society (APS) 81:13 (2010) 134434

Authors:

R Springell, S Langridge, A Wildes, SB Wilkins, C Sanchez-Hanke, KT Moore, MT Butterfield, J Chivall, RCC Ward, MR Wells, GH Lander
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Designed synthesis of materials for high-sensitivity geomagnetic sensors

Applied Physics Letters AIP Publishing 96:5 (2010)

Authors:

L Ding, J Teng, XC Wang, C Feng, Y Jiang, GH Yu, SG Wang, RCC Ward

Abstract:

A structure of Ta/MgO/NiFe/MgO/Ta was designed and synthesized, which combines the advantages of both tunnel magnetoresistance materials with high magnetic field sensitivity and anisotropic magnetoresistance materials with high directional sensitivity. The magnetoresistance ratio in the device with structure of Ta(5)/MgO(4)/NiFe(10)/MgO(3)/Ta(3) (thicknesses in nanometers) increases with an increase in annealing temperature, reaching a maximum value of 3.5% at 450 °C, and then decreases with a further increase in annealing temperature. Meanwhile, a high sensitivity of 2.1%/Oe is obtained. The higher magnetoresistance ratio and sensitivity come from the significant specular reflection of electrons at both interfaces due to the crystalline MgO layer together with the sharp interfaces with the NiFe layer.
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Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

Physical Review B American Physical Society (APS) 81:6 (2010) 064438

Authors:

GX Du, SG Wang, Q L., Yan Wang, RCC Ward, X-G Zhang, C Wang, A Kohn, XF Han
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Exchange bias in epitaxial Fe/Ir0.2Mn0.8 bilayers grown on MgO (0 0 1)

Journal of Physics D IOP Publishing 42:22 (2009) 225001

Authors:

SG Wang, A Kohn, C Wang, AK Petford-Long, S Lee, R Fan, JP Goff, LJ Singh, ZH Barber, RCC Ward
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