Roger Ward

Abstract:

Ar(+) ions have been implanted into Laves phase epitaxial thin films of YFe(2) and DyFe(2). Magneto-optical Kerr effect and vibrating sample magnetometry experiments show that the easy and hard axes of magnetization in both materials rotate through an in-plane angle of 90°, whilst the strength of the magnetic anisotropy remains unaltered. This is supported by OOMMF computational modelling. Atomic force microscopy confirms that the film roughness is not affected by implanted ions. X-ray diffraction data show that the lattice parameter expands upon ion implantation, corresponding to a release of strain throughout the entire film following implantation with a critical fluence of 10(17) Ar(+) ions cm(-2). The anisotropy of the films is linked to the strain and from these data it is concluded that the source of anisotropy alters from one where magnetoelastic and magnetocrystalline effects compete to one which is governed solely by magnetocrystalline effects. The ability to locally tune the source of magnetic anisotropy without affecting the film surface and without inducing or eliminating anisotropy could be important in the fabrication of high density magnetic data storage media, spintronic devices and magneto-optical materials.

Abstract:

Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratios of about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, a MR ratio of about 600% has been reported at RT in MgO-based MTJs prepared by magnetron sputtering, using amorphous CoFeB as the ferromagnetic electrode. These MTJs show great potential for application in spintronic devices. Fully epitaxial MTJs are excellent model systems that enhance our understanding of the spin-dependent tunneling process as the interface is well defined and can be fully characterized. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role in the coherent tunneling across a single crystal MgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism techniques have been reported previously for interface characterization. However, no consistent viewpoint has been reached on the interfacial structures (such as FeO layer formation at the bottom Fe/MgO interface), and it is still an open issue. In this article, our recent studies on the interface characterization of MgO-based epitaxial MTJs by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin-dependent tunneling spectroscopy, will be presented.

Abstract:

Rare earth Laves phase (RFe(2)) superlattice structures grown at different temperatures are studied using x-ray reflectivity (XRR), x-ray diffraction, and transmission electron microscopy. The optimized molecular beam epitaxy growth condition is matched with the XRR simulation, showing minimum diffusion/roughness at the interfaces. Electron microscopy characterization reveals that the epitaxial growth develops from initial 3D islands to a high quality superlattice structure. Under this optimum growth condition, chemical analysis by electron energy loss spectroscopy with high spatial resolution is used to study the interface. The analysis shows that the interface roughness is between 0.6 and 0.8 nm and there is no significant interlayer diffusion. The locally sharp interface found in this work explains the success of simple structural models in predicting the magnetic reversal behavior of Laves exchange spring superlattices.