Collisional relaxation of Feshbach molecules and three-body recombination in 87Rb Bose-Einstein condensates
(2006)
Simulation of heavily irradiated silicon pixel detectors
Proceedings of the International Symposium on Detector Development for Particle, Astroparticle and Synchrotron Radiation Experiments (SNIC 2006) SLAC National Accelerator Laboratory (2006) 0014
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.Two-photon width of the charmonium state χc2
Physical Review D American Physical Society (APS) 73:7 (2006) 071101
Experimental Limits on Weak Annihilation Contributions to b→ulν Decays
Physical Review Letters American Physical Society (APS) 96:12 (2006) 121801
Measurement of the t anti-t Production Cross Section in p anti-p Collisions at s**(1/2) = 1.96 TeV using Missing E(t) + jets Events with Secondary Vertex b-Tagging
ArXiv hep-ex/0603043 (2006)