Type inversion in irradiated silicon: a half truth
ArXiv physics/0409049 (2004)
Abstract:
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.Towards a theory of flavor from orbifold GUTs
Journal of High Energy Physics 8:9 (2004)
Abstract:
We show that the recently constructed 5-dimensional supersymmetric S 1 /(ZSearch for Axion-like Particles from the Sun in an Underground Negative-Ion TPC
Nuclear and Particle Physics Proceedings Elsevier 134 (2004) 130-132
TeV scale resonant leptogenesis from supersymmetry breaking
Journal of High Energy Physics (2004)
Tests of silicon sensors for the CMS pixel detector
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Elsevier 530:1-2 (2004) 71-76