Production and decay of the Ds1 (2536)+
Physics Letters B Elsevier 303:3-4 (1993) 377-384
A 66 MHz, 32-channel analog memory circuit with data selection for fast silicon detectors
Nuclear Inst. and Methods in Physics Research, A 326:1-2 (1993) 100-111
Abstract:
An analog memory array with 64 memory cells for each channel has been designed and manufactured in CMOS. A new skip logic controller allows to write at 66 MHz without dead time and to read out at a lower frequency simultaneously. The input circuit is charge-sensitive and integrates continuously. Pedestal nonuniformity is 1.4 mV rms from cell-to-cell and 3.5 mV rms between channels. The linearity range is -2.5 to +1.5 V, which corresponds to 11 bits. The chip has been used in a particle detection test. © 1993.NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C
NUCL INSTRUM METH A 326:1-2 (1993) 365-372
Neutron irradiation of silicon diodes at temperatures of +20°C and -20°C
Nuclear Inst. and Methods in Physics Research, A 326:1-2 (1993) 365-372
Abstract:
We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5 × 1013 neutron/cm2. The measurements have been made at diode temperatures between room temperature and -20°C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators. © 1993.Tau decays with one charged particle plus multiple π0’s
Physical Review Letters American Physical Society (APS) 70:9 (1993) 1207-1211