Magnetic topological insulator heterostructures: a review
Advanced Materials Wiley 35 (2021) 2102427
Abstract:
Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin–orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)2Te3 films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.Charge Density Wave Orders and Enhanced Superconductivity under Pressure in the Kagome Metal CsV3Sb5
Advanced Materials Wiley 33:42 (2021) e2102813
Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice
Applied Physics Letters AIP Publishing 119:9 (2021) 092405
Measurement of Superconductivity and Edge States in Topological Superconductor Candidate TaSe3 Supported by the National Key R&D Program of China (Grant No. 2017YFA0305400), the Shanghai Technology Innovation Action Plan 2020-Integrated Circuit Technology Support Program (Grant No. 20DZ1100605), the National Natural Science Foundation of China (Grant Nos. 52072168, 21733001, 51861145201, U1932217, and 11974246), the National Key Basic Research Program of China (Grant No. 2018YFA0306200), and the Science and Technology Commission of Shanghai Municipality (Grant No. 19JC1413900).
Chinese Physics Letters IOP Publishing 38:7 (2021) 077302
Experimental evidence for a metastable state in FeTe1−x Se x following coherent-phonon excitation
Journal of Electron Spectroscopy and Related Phenomena Elsevier 250 (2021) 147085