Quantum oscillations of electrical resistivity in an insulator.

Science (New York, N.Y.) 362:6410 (2018) 65-69

Authors:

Z Xiang, Y Kasahara, T Asaba, B Lawson, C Tinsman, Lu Chen, K Sugimoto, S Kawaguchi, Y Sato, G Li, S Yao, YL Chen, F Iga, John Singleton, Y Matsuda, Lu Li

Abstract:

In metals, orbital motions of conduction electrons on the Fermi surface are quantized in magnetic fields, which is manifested by quantum oscillations in electrical resistivity. This Landau quantization is generally absent in insulators. Here, we report a notable exception in an insulator-ytterbium dodecaboride (YbB12). The resistivity of YbB12, which is of a much larger magnitude than the resistivity in metals, exhibits distinct quantum oscillations. These unconventional oscillations arise from the insulating bulk, even though the temperature dependence of the oscillation amplitude follows the conventional Fermi liquid theory of metals with a large effective mass. Quantum oscillations in the magnetic torque are also observed, albeit with a lighter effective mass.

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Science Advances American Association for the Advancement of Science 4:9 (2018) eaat8355

Authors:

Cheng Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, Han Peng, Y Sun, X Xu, J Jiang, Niels Schröter, Yiwei Li, Ding Pei, S Liu, Sandy Ekahana, H Yuan, J Xue, G Li, J Jia, Z Liu, B Yan, H Peng, Yulin Chen

Abstract:

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

Visualizing electronic structures of quantum materials by angle-resolved photoemission spectroscopy

Nature Reviews Materials Springer Nature 3:9 (2018) 341-353

Authors:

Haifeng Yang, Aiji Liang, Cheng Chen, Chaofan Zhang, Niels BM Schroeter, Yulin Chen

Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals.

Nature communications 9:1 (2018) 3311

Authors:

Jianbo Yin, Zhenjun Tan, Hao Hong, Jinxiong Wu, Hongtao Yuan, Yujing Liu, Cheng Chen, Congwei Tan, Fengrui Yao, Tianran Li, Yulin Chen, Zhongfan Liu, Kaihui Liu, Hailin Peng

Abstract:

Infrared light detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of various photoelectric materials. The rise of two-dimensional materials, thanks to their distinct electronic structures, extreme dimensional confinement and strong light-matter interactions, provides a material platform for next-generation infrared photodetection. Ideal infrared detectors should have fast respond, high sensitivity and air-stability, which are rare to meet at the same time in one two-dimensional material. Herein we demonstrate an infrared photodetector based on two-dimensional Bi2O2Se crystal, whose main characteristics are outstanding in the whole two-dimensional family: high sensitivity of 65 AW-1 at 1200 nm and ultrafast photoresponse of ~1 ps at room temperature, implying an intrinsic material-limited bandwidth up to 500 GHz. Such great performance is attributed to the suitable electronic bandgap and high carrier mobility of two-dimensional oxyselenide.

Folded superstructure and degeneracy-enhanced band gap in the weak-coupling charge density wave system 2H−TaSe2

Physical Review B American Physical Society 97 (2018)

Authors:

Yiwei Li, J Jiang, HF Yang, Dharmalingam Prabhakaran, ZK Liu, LX Yang, Yulin Chen

Abstract:

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we have mapped out the reconstructed electronic structure in the commensurate charge-density-wave (CDW) state of quasi-two-dimensional transition metal dichalcogenide 2H-TaSe2. The observation of the fine structure near Brillouin zone (BZ) center supplements the picture of Fermi surface folding in the 3×3 CDW state. In addition to the anisotropic CDW band gaps that energetically stabilize the system at the Fermi level in the first-order lock-in transition, we found band reconstruction at high binding energy, which can be well explained by the hybridization between main bands (MBs) and folded bands (FBs). Furthermore, in contrast to the perfectly nested quasi-one-dimensional system, triple-nesting-vector-induced CDW FBs increase the degeneracy of the band crossing and thus further enlarge the magnitude of band gap at certain momentum-energy positions. The visualization and modeling of CDW gaps in momentum-energy space reconciles the long-lasting controversy on the gap magnitude and suggests a weak-coupling Peierls physics in this system.