Investigation of inter-valley scattering and hot phonon dynamics in GaAs quantum wells using femtosecond luminescence intensity correlation

Superlattices and Microstructures 6:2 (1989) 199-202

Authors:

AM de Paula, RA Taylor, CWW Bradley, AJ Turberfield, JF Ryan

Abstract:

Photoluminescence intensity correlation measurements of GaAs quantum wells using 120 fs laser pulses show relatively slow relaxation times ≤ 10 ps at high energy close to the L valley conduction band minimum. This value is consistent with recent measurements of the L → Γ scattering time. However, theoretical estimates show that nonequilibrium phonon effects can also give rise to slow relaxation on this timescale.

INVESTIGATION OF INTER-VALLEY SCATTERING AND HOT PHONON DYNAMICS IN GAAS QUANTUM WELLS USING FEMTOSECOND LUMINESCENCE INTENSITY CORRELATION

SUPERLATTICES AND MICROSTRUCTURES 6:2 (1989) 199-202

Authors:

AM DEPAULA, RA TAYLOR, CWW BRADLEY, AJ TURBERFIELD, JF RYAN

MAGNETIC FIELD-DEPENDENT HOT CARRIER RELAXATION IN GAAS QUANTUM WELLS

SOLID-STATE ELECTRONICS 31:3-4 (1988) 387-390

Photoluminescence study of two-dimensional carriers in the presence of in-plane magnetic fields

Surface Science 170:1-2 (1986) 624-628

Authors:

AJ Turberfield, JF Ryan, JM Worlock

Abstract:

We have measured the effect of in-plane magnetic fields on the photoluminescence of 2D carriers confined in a modulation-doped GaAsAlGaAs MQW heterostructure. The most dramatic effect is a large increase, and eventual saturation at high fields, of the intensity of radiative recombination at interface acceptors (binding energy ∼ 10 meV). We explain this as a result of field-induced spreading of the confined wave functions toward the barriers. We show this behavior to be qualitatively consistent with an analytically soluble model which combines the in-plane magnetic field with harmonic quantum well confinement to give a 1D composite oscillator. The low field spreading is due to linear displacement of the oscillator centers with B; at higher fields the magnetic field confinement shrinks the wave functions, and they recede from the interfaces. We observe also a diamagnetic shift and a spectral narrowing of the band-to-band recombination. These effects are confirmed quantitatively with the composite oscillator model. © 1986.

Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS

Surface Science 170:1-2 (1986) 511-519

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

Abstract:

Picosecond time-resolved measurements of luminescence from hot carriers confined in GaAsGaAlAs multiple quantum wells show that energy loss rates are substantially slower than those predicted for 2D carriers. We review our recent experiments and present results for photoexcitation of (1) GaAs layers only, (2) both GaAs and GaAlAs layers. We compare the energy loss rates in samples with different well widths. Finally, we present measurements of hot 2D carrier relaxation in the presence of high magnetic fields; at low fields the energy loss rate is reduced, but for B > 9 T we observe a rapid increase. © 1986.