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Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells

Physica B+C 134:1-3 (1985) 318-322

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

Abstract:

We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985.
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Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures

Springer Nature (1985) 567-570

Authors:

JF Ryan, RA Taylor, AJ Turberfield, Angela Maciel, JM Worlock, AC Gossard, W Wiegmann
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PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS

PHYSICA B & C 134:1-3 (1985) 318-322

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK
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MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.

IEE Colloquium (Digest) (1984)

Authors:

JF Ryan, RA Taylor, AJ Turberfield

Abstract:

In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density one can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures

Physical Review Letters 53:19 (1984) 1841-1844

Authors:

JF Ryan, RA Taylor, AJ Turberfield, A Maciel, JM Worlock, AC Gossard, W Wiegmann

Abstract:

We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society.
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