Nucleic acid nanotechnology

Research group

Research theme

Sub department

About

Related research groups

TIME-RESOLVED PHOTOLUMINESCENCE FROM HOT TWO-DIMENSIONAL CARRIERS IN GAAS-GAALAS MQWS

SURFACE SCIENCE 170:1-2 (1986) 511-519

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK
More details from the publisher

Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells

Physica B+C 134:1-3 (1985) 318-322

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

Abstract:

We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985.
More details from the publisher

Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures

Springer Nature (1985) 567-570

Authors:

JF Ryan, RA Taylor, AJ Turberfield, Angela Maciel, JM Worlock, AC Gossard, W Wiegmann
More details from the publisher

PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS

PHYSICA B & C 134:1-3 (1985) 318-322

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK
More details from the publisher

MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.

IEE Colloquium (Digest) (1984)

Authors:

JF Ryan, RA Taylor, AJ Turberfield

Abstract:

In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density one can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.