Photovoltaic & Optoelectronic Device Group

Abstract:

Recently, inorganic and hybrid light absorbers such as quantum dots and organometal halide perovskites have been studied and applied in fabricating thin-film photovoltaic devices because of their low-cost and potential for high efficiency. Further boosting the performance of solution processed thin-film solar cells without detrimentally increasing the complexity of the device architecture is critically important for commercialization. Here, we demonstrate photocurrent and efficiency enhancement in meso-superstructured organometal halide perovskite solar cells incorporating core-shell Au@SiO2 nanoparticles (NPs) delivering a device efficiency of up to 11.4%. We attribute the origin of enhanced photocurrent to a previously unobserved and unexpected mechanism of reduced exciton binding energy with the incorporation of the metal nanoparticles, rather than enhanced light absorption. Our findings represent a new aspect and lever for the application of metal nanoparticles in photovoltaics and could lead to facile tuning of exciton binding energies in perovskite semiconductors.

Abstract:

Chemical doping is a powerful method to improve the charge transport and to control the conductivity in organic semiconductors (OSs) for a wide range of electronic devices. We demonstrate protic ionic liquids (PILs) as effective p-dopant in both polymeric and small molecule OSs. In particular, we show that PILs promote single electron oxidation, which increases the hole concentration in the semiconducting film. The illustrated PIL-doping mechanism is compatible with materials processed by solution and is stable in air. We report the use of PIL-doping in hybrid solar cells based on triarylamine hole transporting materials, such as 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene (spiro-OMeTAD). We show improved power conversion efficiency by replacing lithium salts, typical p-dopants for spiro-OMeTAD, with PILs. We use photovoltage-photocurrent decay and photoinduced absorption spectroscopy to establish that significantly improved device performance is mainly due to reduced charge transport resistance in the hole-transporting layer, as potentiated by PIL-doping.