Quantum Optoelectronics

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Near-exact simulations of electronic wavefunctions of dibenzoterrylene in anthracene crystal

In Preparation

Authors:

A. Alhajria, O. Pusuluk, and T. Farrow*

Abstract:

Near-natural linewidth room temperature single-photon source from optical microcavity-embedded CsPbI3 perovskite quantum dots

In Preparation

Authors:

T. Farrow et al.

Abstract:

Simulating Quantum Zeno Dynamics in a Quantum Computer

In Preparation

Authors:

T. Farrow et al.

Abstract:

Stability of mixed lead halide perovskites films encapsulated in cyclic olefin copolymer

In Preparation

Authors:

M. Alazani, .., R. Taylor, T. Farrow*

Abstract:

Decreased fast time scale spectral diffusion of a nonpolar InGaN quantum dot

ACS Photonics American Chemical Society 9:1 (2021) 275-281

Authors:

Claudius Kocher, John C Jarman, Tongtong Zhu, Gunnar Kusch, Rachel A Oliver, Robert Taylor

Abstract:

Spectral diffusion can lead to considerable broadening of the line width of nitride quantum dots. Here, InGaN quantum dots grown on a nonpolar plane were shown to exhibit a decreased spectral diffusion rate compared to polar nitride dots. A robust intensity correlation method was used to measure the spectral diffusion rate of six quantum dots. A maximum spectral diffusion time of 1170 ± 50 ns was found. An increase of the rate with increasing power was observed. The decreased internal field leads to a lifetime for the nonpolar dots that is shorter than that for polar dots; the important ratio of spectral diffusion time to lifetime is more favorable for nonpolar quantum dots, thereby increasing the chances of generating indistinguishable photons.
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