Quantum Optoelectronics

Abstract:

Creation: 11.2016-1.2017 Raw data + analysed data by Matlab and Origin For each figure the rawdata underlying it was added as well.

Abstract:

Exfoliated crystalline niobium oxides that contain exposed but interconnected NbO 6 octahedra with different degrees of structural distortion and defects are known to catalyze Brønsted acid (BA), Lewis acid (LA), and photocatalytic (PC) reactions efficiently but their structure–activity relationships are far from clear. Here, three exfoliated niobium oxides, namely, HSr 2 Nb 3 O 10 , HCa 2 Nb 3 O 10 , and HNb 3 O 8 , are synthesized, characterized extensively, and tested for selected BA, LA, and PC reactions. The structural origin for BA is associated mainly with acidic hydroxyl groups of edge-shared NbO 6 octahedra as proton donors; that of LA is associated with the vacant band position of Nb 5+ to receive electron pairs from substrate; and that of PC is associated with the terminal Nb=O of NbO 6 octahedra for photon capture and charge transfer to long-lived surface adsorbed substrate complex through associated oxygen vacancies in close proximity. It is believed that an understanding of the structure–activity relationships could lead to the tailored design of NbO x catalysts for industrially important reactions.

Abstract:

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved µPL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^((2) ) (0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.

Abstract:

We find that the exciton dipole–dipole interaction in a single laterally coupled GaAs/AlGaAs quantum dot structure can be controlled by the linear polarization of a nonresonant optical excitation. When the excitation intensity is increased with the linearly polarized light parallel to the lateral coupling direction [11̅0], excitons (X1 and X2) and local biexcitons (X1X1 and X2X2) of the two separate quantum dots (QD1 and QD2) show a redshift along with coupled biexcitons (X1X2), while neither coupled biexcitons nor a redshift are observed when the polarization of the exciting beam is perpendicular to the coupling direction. The polarization dependence and the redshift are attributed to an optical nonlinearity in the exciton Förster resonant energy transfer interaction, whereby exciton population transfer between the two quantum dots also becomes significant with increasing excitation intensity. We have further distinguished coupled biexcitons from local biexcitons by their large diamagnetic coefficient.