ACTIVE-MODE STABILIZATION OF A SYNCHRONOUSLY PUMPED MODE-LOCKED DYE-LASER

OPTICS COMMUNICATIONS 41:4 (1982) 271-276

Authors:

AI FERGUSON, RA TAYLOR

Active Mode Stabilization of Synchronously Pumped Dye Lasers

Springer Series in Chemical Physics Springer Nature 23 (1982) 31-35

Authors:

AI Ferguson, RA Taylor

Magnetic properties of a Ni-Fe-Co-Ti alloy

Journal of Magnetism and Magnetic Materials 15-18:PART 3 (1980) 1173-1174

Abstract:

The 33.8 Ni-51.0 Fe-14.0 Co-1.2 Ti wt% alloys is a suitable ferromagnetic system for investigation of the coercivity associated with non-magnetic inclusions. Basic magnetic properties have been measured. Electron microscopy at 1 MeV shows the interaction of microstructure and magnetic structure. Preliminary measurements of coercive force on bulk single crystals are presented. © 1980.

1-nm linewidth room temperature single-photon source from optical microcavity-embedded CsPbI3 perovskite quantum dots

Authors:

Tristan Farrow, Amit Dhawan, Ashley Marshall, Alexander Ghorbal, Wonmin Son, Henry Snaith, Jason Smith, Robert Taylor

An ultrafast polarised single photon source at 220 K

Authors:

T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, Robert Taylor

Abstract:

A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with deterministic polarisation properties at the same high temperature conditions. Here, we report the first device to simultaneously achieve single photon emission with a g(2)(0) of only 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K. The temperature insensitivity of these properties, together with the simple planar growth method, and absence of complex device geometries, makes this system an excellent candidate for on-chip applications in integrated systems.